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3. Planar solid-liquid interface must be maintained during the growth of semiconductor single crystals. A Ge-Ga semiconductor crystal is grown by normal freezing with c completely suppressed (meaning CsCo). Melt composition is 23 ppm Ga. The thermal gradient in the liquid at the solid-liquid interface is maintained at 20°C/cm. Assume k 0.12, m-5 °C/%, Di-5.5x10 ems. Determine the maximum growth rate for planar growth according to the constitutional supercooling criterion?

engineering   Mechanical-Engineering   
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