Question

q = 1.6x10-19 C, n = 1.5 x 1010 cm, kT/q = 0.026 V, silicon permittivity = 11.9 x 8.85 x 10-14 F cm", EG (Si) = 1.12 eV Question 1 a) Explain, with diagrams and PHYSICS, the 4 regions of lps vs Vos curves for a n-channel MOSFET. You need to draw the I-V curve, and the channel diagram, and energy band diagrams in the x direction to explain the I-V curve. No curves, no points. b) Since the channel gets pinched off when Vos > VG - VT, why does it conduct any current beyond pinchoff? Explain clearly with an appropriate diagram.

Answer 1

N-MOSFET + Source Brain. g Drone A PITATI MC Sioz Sio2 ท 9+ Induced channel P- Substrate operation of - MOSFET (Channel a Linear region & Saturation region , 7V Break down region C Is in mA 3r cut off region. & Vos = 28 Vos in v istics ID vs Vo In vs Vos Drain-Characteristics For NMOS

PS naturo co SiO2 natural region ----- - si depletion region. Band-Diagram When Vas TV no channel is formed , I = 0 this region is called Cut-off region. when Vos reaches a critical value the channel at the drain end become pinched off .. Then Current become saturated This region is called saturated region. when Current Is is increase with voc. this region is called linear region. For large enough Vos there may be breakdown in N. MOSFET Cause sudden increane in In This region is called breakdown ree