could you help me with this question please.
could you help me with this question please. a) A logic gate has nominal logic voltage...
16. For the circuit below, use the data sheet to answer the next five questions. As an example, the voltage at TP1 should be 2 2.4 V since the output of that gate is HIGH. (17 pts) a. What voltage do you expect to measure at TP2? (3 pts) b. What voltage do you expect to measure at TP3? (3 pts) c. What voltage do you expect to measure at TP4? (3 pts) d. What voltage do you expect to...
PLEASE HELP!!! I dont really need the work just the right answers please QUESTION 1 Consider an inverter with VTC shown in the figure. The noise margin for high input is vo Voн Slope = -1 Slope = 1 VM M Slope Vol 0 VoL VIL Vio VIN VOM Vi NM = VDO NM, VH-VOL NM) -VOH - VIH NM-Vow-VIL QUESTION 2 Which of the following statements is (are) True for the noise margins of CMOS inverter? (check one or...
QUESTION 2 You are attempting to implement a NOR gate by using the BJT circuit shown in Figure 2. Note that the two BJTs are identical. Vec 3V • VOLT R RS w A w B OL Figure 2: NOR gate implementation There are two operational requirements that you need to achieve: The required output voltage thresholds are: Von = 2.4 and VoL = 0.4. The current load at the base cannot exceed a certain value, i.e. Is s 1(max)...
Q1,Q2 and Q3 plz help Question Consider the following inverter design problem: Given VpD 5V, k' 30uA/V , and Vo 1V, design a resistive-load inverter circuit with VoL 0.2V . Specifically, determine the (W/L) ratio of the driver transistor and the value of the load resistor RL that achieve the required VoL- (10 marks) Question 2 Consider a pseudo-nMOS NOR2 gate, with the following parameters: 1V., Vro,load -31V, y = 0.4V1/2, andl F|= 0.6V. The transistor Hn Cox =254A/V2, Vro,driver...
could you please help me with this question? Thank you :) An ideal battery creates a potential difference at the electrodes equal to its emf no matter what is attached. However, in reality, the electrochemical cells that creates the emf has its own internal resistance. In the circuit below the dashed box represents a real battery, and Ry is the internal resistance. It causes the battery output voltage (that you would measure between the top and bottom of the box)...
Question a to d please. QUESTION 3 Datapaths (25 Marks) You are provided with a logic circuit that performs the following: if C 1 or X>Y, Out a) otherwise Out-0. You can assume the inputs X, Y and C and the output Out are each 1- bit wires. It has the following symbol and entity declaration 1; X Y C entity greater than is X, Y Out in std logic out std_logic) port Out end greater_than; Draw a schematic that...
4) output and ground is C (not shown). You should add this capacitor in the figure. Assume that the load capacitor connected between the +2.5 V VDD 1.81 Uo 0 2.22 I M When the input voltage changes from VL to VH abruptly at time t 0, (a) In the figure above, draw the path for current flow after the output voltage changes and reaches its new dc value. Draw in the above figure (b) What are the circuit parameters...
Could you please help with solving the following question. Note answers are attached below: please show how these answers were obtained: Q4. A single phase 50-Hz, 100 kVA, 11000/400 V-rms transformer is connected with the grid supply (Vi) as shown in Figure 3 15Ω j100 Ω j0.12 Ω 0.016 Ω Wll j50k 2 Load V240P 300k Ideal Transformer Figure 3 The load is connected on the secondary terminal to operate at 75% of its rated kVA at 0.8 lagging power...
Could you please read 7483 data sheet and then answer number e 7383 Data Sheet 5483A 4-Bit Binary Full Adder with Fast Carry General Description The '83A high speed 4-bit binary full adders with internal carry lookahead accept two 4-bit binary words (Ao-A3, Bo- B3) and a Carry input (Co). They generate the binary Sum outputs (So-S3) and the Carry output (C4) from the most significant bit. They operate with either HIGH or active LOW operands (positive or negative logic)....
Could someone please help me on how I should be configuring the circuit in Figure 4(a) in Multisim? Basically not understanding question #1 in the Procedure. Cannot keep Vrb the same value while adjusting Vcc. Then when trying to adjust Vbb to hold Vrb, Ib changes. Any help is appreciated! Discrete Devices Section LAB 4 BJT CHARACTERISTICS AND BIASING Objective: The objective of this laboratory is to examine the operation of a bipolar junction transistor and plot its output characteristics...