1. (10 pts) Find the voltage gain for the circuit shown below, assume β-200. Vbe-0.6 and...
The 1 mA. V, ls -VE -15 15 V, in the following differential amplifier circuit, Vcc parameters are given as β, 100, VBE# 0.7 V, pr-25 mV, K.-100 V. transistor Rc-10 kΩ For: RE-150 Ω Rc Rc REE-200 kΩ a) What is the input differential resistance, Rid b) What is the overall voltage gain vV? You c) What is input common mode resistance, d) What is the worst case common mode gain that appear across the two input terminals? (4...
All transistors in the circuit below are identical. Transistor
parameters are hFE=hfe=β= 200,
IS=10 fA and VT = 26 mV.
a. Obtain the differential mode gain equation:
Add=(V01-V02)/(V1-V2).
b. VDD=5V, -VSS=-5V, IB=2mA,
RC=2kΩ and RL=3kΩ. Calculate the differential
mode gain (Add) of the circuit.
c. How do you connect a common emitter stage to one of the outputs
of the circuit? Please draw on the circuit.
+VDD Rc 3 Rc Voi VO2 w R Vi V2 IB -Vss
Consider the BJT common-emitter amplifier in Figure 1. Assume that the 2N3904G transistor has the following parameters: β-206, VBE-0.TV and the Early voltage VAT 1000V. vCC RB1a I multiple resistors RC want n Vload 22HF Rload 01 2N3904G V1 6302 4.7HF RE2CE 0.01Vpk 1kHz maliple esistons lue you available in the ki Figure 1 BJT CE amplifier 0.5 V and VC-3 V (a) Design the DC biasing circuit so that lc-2 mA, VCE = 2.5 V, VE
Consider the BJT...
Consider the circuit shown in Figure 1. A Q-point value for IC
between a minimum of 4 mA and a maximum of 5 mA is required. Assume
that resistor values are constant and that β ranges from 100 to
300. It is desired for RB to have the largest possible value while
meeting the other constraints.
(a) Determine the values of RB and RE.
(b) Explain the contribution of resistor RE for thermal
stabilisation of this circuit (Thermal stabilisation -...
DC Biasing For the circuit below, assume 150, VBE(ON) -0.7V and Vce(SAT)- 0.2V Voc 10 VO Rc 3.3K ib Rb 330K Write an equation for ib in terms of Vin (Hint: use KVL from VBB to ground) Write the general equation for ic in terms of ib and P Write an equation for Vce in terms of ic CE- Fill the table Operational Region 0 V 3 V 5 V 7 V
can anyone help with c?
8. Consider the circuit shown in Figure 7. A Q-point value for Ic between a minimum of 4 mA and a maximum of 5 mA is required. Assume that resistor values are constant and that B ranges from 100 to 300. It is desired for RB to have the largest possible value while meeting the othei constraints. (a) Determine the values of RB and RE. (b) Explain the contribution of resistor Re for thermal stabilisation...
Problem 1130 pts 1. [12 pts] For the circuit shown in Fig. 1, istance Rm when the switch is open. What type of voltage gain Vo/Vin and the input resistance Rin when the switch is close. What type of a) Find the voltage gain val vin and the input resistance Rin when the switch is open b) Find the amplifier is this? amplifier is this? tin vo R Fig. 1 [18 pts] Design a circuit that implements the following: Vo(t)...
Laboratory 2: Transistor circuit characteristics A. Objectives: 1. To study the basic characteristics of a transistor circuit. 2. To study the bias circuit of a transistor circuit. B. Apparatus: 1. DC Power supply 2. Experimental boards and corresponding components 3. Electronic calculator (prepared by students) 4. Digital camera (prepared by students for photo taking of the experimental results) 5. Laptop computer with the software PicoScope 6 and Microsoft Word installed. 6. PicoScope PC Oscilloscope and its accessories. 7. Digital multi-meter....
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...
Assuming a power of 1.8mW and an overdrive voltage (VGs-VTH) of 200 mV for M1, design the circuit shown below for a voltage gain (magnitude) of 4. Assume λ = 0.0, find values for w/L for Mi and M2 TDD 2 Vout
Assuming a power of 1.8mW and an overdrive voltage (VGs-VTH) of 200 mV for M1, design the circuit shown below for a voltage gain (magnitude) of 4. Assume λ = 0.0, find values for w/L for Mi and...