Question

Please help me homework problem for semiconductor devise, show all the steps and solve a upto e,

tanks :-)

Figure 2 is the IV characteristics of an NMOSFET with Tox 10 nm, W 10 um and L 2 um. (Assume m 1 and do not consider velocity saturation.) (a) Estimate Vt from the plot. (b) Calculate Vt using the currents shown on plot. (c) Estimate u1s in the inversion layer. (d) On the plot show triode and saturation regions e) Add the -V curve corresponding to Vgs 1.5V to the plot. Calculate Id at Vds 0.5V, 0.75V, 1.0 V and 2.0V and show on plot. Vgs 2V 2 VEs1V 2.5 1.5 2.0 0.5 1.0 Vds (V) FIGURE 2 I (mA)

Answer 1

Solution: (a) the graph. r Vgs 2V. From Ids (Sat) Vaesal) SV we Know that s csat) 3s Vssal) 2 .S a.S V Vt o.7V the gmphV 07V Ch from 4.9MA Ids s, = 2 V JdS o2mA IV SakuraHion egim, Km (2VsV" (3s,- -V In the (2- V G-VJ 2.8 (3- VE (1-V 8-V=3- 2 V Vto.5V Inversion layer is fovmed in saturation Yegin C2) CVs-V Ids Co 2.9x 8. S4XJ 14 34.S3 I Kn 2.8 m (5)(15) .2489 1 ns 130 82 Gms-Y 34.S3 x1o

Cd) trio de vegion Vds Vg t , '4 is incveased wit f Saturahion regien as> Vgs- Vt , dsis almost Cewstant Saturation trio de Tegion Vas 2V region Vde(v gs =1.SV as,= Kn 2. 8 m A , Vgs,2 V 2.&m . 244 m (1.5 Kn VgsV 24m 15-0.5) .244MA -5-.S =V. s (at) Ve AIds (mA) os 2 V ds(sa)