semiconductor devices . Electron-hole recombination in direct band-gap semiconductors is known to yield photons. (0) For...
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
1. Explain why it is difficult to make light emitting devices out of indirect band gap materials. 2. When a direct semiconductor is excited by absorption of photons with energy greater than the band gap, it is generally found that the luminescence spectrum is independent of the exciton frequency. Explain the phenomenon. 3. The radiative life time to of the laser transition in titanium doped sapphire is 3.9 us. The lifetime t of the excited stste is measured to be...