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Question 6 (1 point) In pattern formation, wet etch processes can be used to remove: Critical layers (layers with critical diQuestion 10 (1 point) What are the most commonly used reactive gases in various dry etch processes? a) Helium and argon Ob) HQuestion 11 (1 point) In a given plasma etcher, the plasma etch process may be affected by: a) Chamber pressure Ob) Gas flowsQuestion 12 (1 point) The amount of each gas injected into the etch process chamber is regulated and controlled using: a) Pre

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