Problem 5. To obtain a desired performance of electronic device silicon need to be doped with...
Problem 5. To obtain a desired performance of electronic device silicon need to be doped with s. This can be achieved by exposing silicon to a flux of thermal neutrons where silicon- 30 is converted into phosphorus. S-30 has an abundance of 3.1% and reaction cross-section is 0.108 barns. How long does it take to achieve a phosphorus impurity content of 10 parts per billion in natural silicon if the thermal neutron flux is 2.1x1013 cm2 s1?