Question

Question 2: In a Gallium Arsenide (GaAs) sample at T-300K, it is found that no 4Po and that N -0. (a) Determine Po,10, Na and (b) sketch the band diagram labeling Ec, Ev, Ei and EF. Note Ef should be reference to a band edge (15 points)

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Answer 1

Commonly accepted value of
Commonly accepted value of n_i (intrinsic carrier concentration or hole concentration) at T = 300 K is 1.8 times 10^6 cm^- 3 for G a As. Given that n_0 = 4p_0 rightarrow (1) n_0 p_0 = n^2_i rightarrow^. 4 p^2_0 = n^2_i rightarrow^. 2 p_0 = n_i rightarrow^.p_0 = 0.9 times 10^6 cm^- 3 Therefore n_0 = 3.6 times 10^- 6 cm^- 3 (From 1) Given that N_a = 0 n_0 + N_a = p_0 + N_d N_d = n_0 - p_0 Therefore N_d = 2.7 times 10^- 6 cm^- 3 The sketch is as follows describing the band energy level
(intrinsic carrier concentration or hole concentration) at T=300 K is x for GaAs.

Given that ------- (1)

$n_{0}p_{0}=n_{i}^{2}$

x

x (From 1)

Given that $N_{a}=0$

x

The sketch is as follows describing the band energy level :