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Homework 1 Problem 4: Assume transistor parameter are Vtp = -0.4 V. 25,(W/L)2 = 15, (W/L)2...
Calculate the current ID in an n-channel MOSFET with following parameters: VTH=0.4 V, W=20 µm, L=0.8 µm, µn=650 cm2 /V·s, Cox=0.17×10-6 F/cm2 . Determine the current when the transistor is biased in the saturation region for VGS=0.8 V.
4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What is the largest value that RD can have while maintaining saturation-region operation? VDD-+5 V o-0.5mA RG2 RG2 RD Figure 4 4. Design the circuit of Figure 4 so that the transistor operates in saturation with ID0.5mAand V3V. Let the enhancement-type PMOS transistor have VV and k, (w/L)-1m4/V2. Assume λ-Ο What...
help me please subscription 5. The PMOS transistor has Vtp=-1 V. If the voltages of three terminals are: Vg=2 V, Vs=5v, Vd=3.5V, then the transistor is operated in a) Cut off region b) Triode region c) Saturation region d) Unknown 6. The voltage transfer characteristic of a CMOS inverter is shown in Fig. 4. Threshold voltages Vrn = |Vpl = 0.5V. If Vpo=5V and the input v=3V, then Saved to this PC a) Both PMOS and NMOS in triode region...
Consider an nMOS transistor with VTH = 0.4 V, Kn = 140μA/V2 , length, L = 0.25μm, and width, W = 1.25μm. (a) Given that VGS = 1V, determine the range of values of VDS for which the device is in the saturation region. (b) Given that VGS = 1V, determine the range of values of VDS for which the device is in the triode/linar region. (c) Plot IDS vs VGS for operation in the saturation region. Ignore channel length...
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...
(25 points) Consider an NMOS transistor with L-0.18 um and W-2 um. The process technology is specified to have Cox 8.6 fF/um2, Hn = 450 cm2/V s, and Vin 0.5 V. a) Find VGs and VDs that result in the MOSFET operating at the edge of saturation with ID 100 uA. b) If VGs is kept constant, find Ip when VDs is reduced to 0.06 V
1) A PMOS transistor is fabricated with one of the latest process technologies for which L = 8 nm, W = 36 nm, tax = 0.75 nm and p = 478 cm /V.S. a) Find Cox, K'p and Kp. Don't forget to add the units and be careful with them! b) Assuming this transistor is modified to have Kp = 1 mA/V2 and Vtp = -1 V, analyze the following circuit to determine all the voltages and currents. Remember to...
An n-channel MOSFET has parameters VTN = 0.75 V, W = 40 µm, L = 4 µm, tox = 450 Å, and µn = 650 cm2/V-s. Determine the value of the drain current if the transistor is biased in the saturation region and VGS = 2 VTN.
Problem 4 (15 points) A particular MOSFET for which Ven = 0.5 V and k',(W/L) - 1.6 mA/V2 is to be operated in the saturation region. If ip is to be 50 uА, find the required vgs and the minimum required Ups. Repeat for ip = 200 MA.
Problem 4 (25 points) Consider an n-channel MOSFET at T=300K. Assume: n polysilicon gate, t = 500 A, N = 2x105cm-3,9' =10cm-2 Ox a W = 5 um, L = lum, 4. = 1000m, = 3.9€ , € = 8.854x10 " F/cm Qc is the number of electronic charges per unit area in the oxide a) (10 points) Determine the threshold voltage. b) (5 points) Is the transistor enhancement or depletion mode? Explain. c) (10 points) Assume the transistor is...