Why is C(mu)
C(mu) = 1 + gm(Rc || RL) ????????
Why is C(mu) C(mu) = 1 + gm(Rc || RL) ???????? B) Clearly draw your hybrid-pi...
need answer. dont know. please select the correct one Rc-4.3 k2 RB 500 kS2 RL 100 k2 Cc 10 uF Vs Assume transistor is NOT ideal and hence do not ignore the transistor high frequency capacitances GT and Gu Regarding the amplifier circuit above, which of the following statements is INCORRECT? There is only one incorrect sentence (you might need to draw freq response and draw equivalents before answering) When calculating the upper 3 dB frequency, the time constant is...
Q2) Please show all working Thank you :) Question 2 (25 Marks) (a) (6 Marks) Bias the CE amplifier in Figure 2 to have IE = 1mA. Assume B-100, VBE(On) = 0.7 V, Vcc = 15V, VEE= -15V and RB = 100kQ. List all node voltages, currents and resistor values. (b) (10 Marks) Draw the small-signal model for the CE amplifier in Figure 2 Determine the input resistance, output resistance and gain of the amplifier. Assume VA = 100V, RL...
Voc Ri Rc C2 + RS G Q2N3904 RL Vout 2 R2 RE CE Rin Rout Cu B 1x B C o + V be : Cr 8m'be E VCC R R2 Rc RE RS RL С. Cz CE 12 V 8.2 kg 3.9 ko 6.3 k2 3.3 kΩ 3 ko 3.9 ko 10 uF 1uF 100 u Assume the 2N3904 has a 8 =100, Veron} = 0.7V, VA= 100V, C=100, C=13.9pF and Ce=8pF. Use the emission coefficient as n...
I need help understanding how to do part b. I don't know why and where (1 + gm*R_D1 || R_L) came from, and why did we multiply it with R_S || R_11 || R_21. Please explain! L.2 (a) Ru= R21 = 150 k$2. (b) RD1 3 k2. (c) Rs,-400 Ω. (d) RL = 10M. (e) 9m 10 mS (f) Use 10 μF capacitors. (g) Cgs = 55 pF (b) Cgd = 5 pF (i) Cds 25 pF 2.75ns (a) Determine...
b) An amplifier has values of V = 24mV and Vout gain of the circuit 2V. Calculate the dB voltage (2 marks) c) For the circuit shown in Figure 11, calculate the lower critical frequency due to the output RC circuit. Vec +15 V R 3.9 LO C V. R. 0.33 uF 2N3904 600 n 0.1 F 5.6 k REI 33 0 R 22 k 50 mVpp 1.5 k 100 F (5 marks) Figure 11 12. a) Name the type...
1) Design a low-pass RC device with the following specifications: a) Input x(t) and output y(t) b) Bandwidth which is defined as the range of frequencies (from 0 Hz to ??, the − 3dB point ) allowed to pass through without significant attenuation = 100Hz c) Static gain = 14dB d) The system has −20 dB/decade rolloff at high frequencies (thus first-order LP filter) Assume that you have one and only one resistor value available to you, and that resistance is...
2.(20pts) The NFET transistor in the source-follower circuit has gm=5mA/V and 1=100k. Draw a hybrid- small-signal schematic. Derive expressions for and calculate the following: voltage gain v/v; and the output resistance Rout. Show all your work! C P +100 [104 You
1. The following circuit shows a discrete common source MOSFET amplifier. The MOSFTE is n-channel MOSFET and early voltage (Va) is c. The transconductance of the amplifier (ga) is 3 mA/V The frequency responses of the amplifier are as follows i) The three low break frequencies f 3Hz (caused by C).fiz-S0Hz (caused by Cs). fs-10Hz (caused by Ca) ii) High 3 dB frequency. f-30kHz ii) The MOSFET unity gain frequency fr-100 MHz (a) Draw small signal equivalent circuit of the...
please I need details l and....Debate Club | Offic A) Theoretical Design Design a common emitter BJT amplifier with the following requirements: -Rin-10 K2, and Ro-45 ㏀ (Neglect the Early voltage Effect) Vo/Vsig- Gv-40 VIV or 32 dB " VCC-9 V V, IC-1mA, VCE-3.25V and β-100 RL-40 kQ, Rsige I ka, R 1-3R2, and C1-C2-1 μF Voc RC C2 R1 Rsig C1 RL R2 RE B) Verify your design using Orcad Capture Pspice by doing 1) AC sweep (frequency response):...
Rpi Ri Mi 1. Specifications (a) RR21 150 k. (b) RDi 3 k2. (c) Rs1 400 Ω. (d) RL 10 k. (e) 9m-10 mS. (f) Use 10μF capacitors. (h) Cod 5 pF (i) Cds= 25 pF Tasks (a) Determine (b) Determine Tod (c) Determine TL from Ci2 and CDB) (d) Determine H, the 3 dB high frequency bandwidth Rpi Ri Mi 1. Specifications (a) RR21 150 k. (b) RDi 3 k2. (c) Rs1 400 Ω. (d) RL 10 k. (e)...