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7 4-1. Calculate the values of Ic and 1ε for a transitor with 4-a, nd Ica,-10μΑ,...
1) Calculate the value of the base current IB. (in μA) 2) Calculate the value of...
1) Calculate the value of the base current
IB. (in μA)
2) Calculate the value of the base collector current
IC. (In mA)
3) Calculate the value of the collector-emitter voltage
VCE. (In V)
Required information In the circuit below: RB = 820 kN, Vcc = 12 V, RC = 3 kN2, and Bdc = 100. Note: The transistor is silicon. Vcc w Rc Re Bdc
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror sh...
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror shown next when the junction ratio between Q 2 and Q1 is equal to n # 1. In the above equation, VB is the voltage between base and emitter when the transistor is in active mode, V z is the voltage between collector and emitter at the rightmost transistor, and V is the Early voltage. REF Note: For this problem we are...
Solve 11 and 12 1. (10 pts.) A base current Is of 0.048 mA is applied...
Solve 11 and 12
1. (10 pts.) A base current Is of 0.048 mA is applied to the transistor in the Figure below. A voltage of 3.6 V is measured across resistor Re. Determine the emitter current le and the transistor pox 100 kn Van IE: 12.(15 pts.) For the NPN transistor circuit bhown,cakculate la, l and Va says that pa-oTV when the transistor is ON. (Given ?. 150) Use the usual approximation, which cC CE 200 kQ IB: Ic:...
I am POSTING question with solution please explain me how the solution is being solved please do ...
I am POSTING question with solution please explain me
how the solution is being solved please do it on paper please it is
a humble request I AM posting my question 6TH TIME PLEASE tell me
and explain me STEP by step what is happening in the question and
how to solve it ON PAPER please explain the steps
a. Using the characteristics of Fig., determine Bac at IB 60 mA and VCE z4 V b. Using the characteristics of...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be=...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be= Voc +10 V RB We are going to consider the common emitter configuration circuit shown in the figure to test a 2N3904 npn Bipolar Junction Transistor (BJT) under DC bias conditions. Your circuit should place a fixed collector resistor, Rc, in the circuit to prevent the collector current, Ic, from exceeding 40 mA (for this, you know that the minimum value of is zero)....
question 3 and 4 Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics...
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
3-15. In a certain experiment, the collector current of a transistor was measured at different values...
3-15. In a certain experiment, the collector current of a transistor was measured at different values of collector-emitter volt- age, while the base current was held con- stant. The results of the experiment are summarized in the following table: IC Ig = 100 PA VCE 15 mA 10 V 16 mA 17 mA 20 V 18 mA 5V 15 V 13 = 200 A VCE 5 V 10 V 15 V 20 V 30 mA 32 mA 34 mA 36...
Not the highlighted ones 352 Part 1 Semiconductor Devices and asic Applications sme Valon) assume Veacon)...
Not
the highlighted ones
352 Part 1 Semiconductor Devices and asic Applications sme Valon) assume Veacon) - 0.7 PROBLEMS (Note: In the following problems, unless otherwise stated, assum and cast) = 0.2 V for me transistors, and assume V Vec(sat) = 02 V for pup transistors region.aera . A Determine A and ig = 1.80 mA de. The colle 726 A and th 732 A. Delen di 2.961 is 110 P51 mine parande se current is 50 A Section 5.1...
1) Calculate the value of the base current
IB. (in μA)
2) Calculate the value of the base collector current
IC. (In mA)
3) Calculate the value of the collector-emitter voltage
VCE. (In V)
Required information In the circuit below: RB = 820 kN, Vcc = 12 V, RC = 3 kN2, and Bdc = 100. Note: The transistor is silicon. Vcc w Rc Re Bdc
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror shown next when the junction ratio between Q 2 and Q1 is equal to n # 1. In the above equation, VB is the voltage between base and emitter when the transistor is in active mode, V z is the voltage between collector and emitter at the rightmost transistor, and V is the Early voltage. REF Note: For this problem we are...
Solve 11 and 12
1. (10 pts.) A base current Is of 0.048 mA is applied to the transistor in the Figure below. A voltage of 3.6 V is measured across resistor Re. Determine the emitter current le and the transistor pox 100 kn Van IE: 12.(15 pts.) For the NPN transistor circuit bhown,cakculate la, l and Va says that pa-oTV when the transistor is ON. (Given ?. 150) Use the usual approximation, which cC CE 200 kQ IB: Ic:...
I am POSTING question with solution please explain me
how the solution is being solved please do it on paper please it is
a humble request I AM posting my question 6TH TIME PLEASE tell me
and explain me STEP by step what is happening in the question and
how to solve it ON PAPER please explain the steps
a. Using the characteristics of Fig., determine Bac at IB 60 mA and VCE z4 V b. Using the characteristics of...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be= Voc +10 V RB We are going to consider the common emitter configuration circuit shown in the figure to test a 2N3904 npn Bipolar Junction Transistor (BJT) under DC bias conditions. Your circuit should place a fixed collector resistor, Rc, in the circuit to prevent the collector current, Ic, from exceeding 40 mA (for this, you know that the minimum value of is zero)....
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
3-15. In a certain experiment, the collector current of a transistor was measured at different values of collector-emitter volt- age, while the base current was held con- stant. The results of the experiment are summarized in the following table: IC Ig = 100 PA VCE 15 mA 10 V 16 mA 17 mA 20 V 18 mA 5V 15 V 13 = 200 A VCE 5 V 10 V 15 V 20 V 30 mA 32 mA 34 mA 36...
Not
the highlighted ones
352 Part 1 Semiconductor Devices and asic Applications sme Valon) assume Veacon) - 0.7 PROBLEMS (Note: In the following problems, unless otherwise stated, assum and cast) = 0.2 V for me transistors, and assume V Vec(sat) = 02 V for pup transistors region.aera . A Determine A and ig = 1.80 mA de. The colle 726 A and th 732 A. Delen di 2.961 is 110 P51 mine parande se current is 50 A Section 5.1...
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