Question

Help, I have checked many similar questions to this one and all the ones with the same numbers and wording have different answers. The ones with different answers are done differently. I am very confused.

Consider an intrinsic Si sample at room temperature (300K).

(a) The probability of a state being occupied at 0.02 eV above the conduction band edge.

(b) The probability of a state being empty at 0.05 eV below the valence band edge?

(c) The probability of a state being occupied at the Fermi level.

(d) Repeat part (a) for a higher temperature of 200°C. Note your observation.

Answer 1

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(b) gten Position 아 € 0.05 ev below thre Valede Band O.OS at T-ook Prob. ot State being e ty -v 」-f(E) iナe 038 e 413k E -F ナ0.02 O. 57 ev f(E) = t 0.57 しナ巳0.0401 Above the Gnóv.ctione d İh SH.U οχ eMen Ater Incresing the Tek from 3ook to 413 k. Thin the exact△ Right way t Calculate f(E)