The intrinsic tempature of a semiconductor is the tempature at wich the intrisic carrier concentration equels...
The intrinsic tempature of a semiconductor is the tempature at wich the intrisic carrier concentration equels the imparity concentration. Find the intrinsic tempature for a silicon sample doped with 10^15 phosphorus atoms/cm^2
Homework Answers
Add Answer to:
The intrinsic tempature of a semiconductor is the tempature at
wich the intrisic carrier concentration equels...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
The mobility values of electrons and holes in a silicon sample are 1500 cm2/Vs and 500...
The mobility values of electrons and holes in a silicon sample are 1500 cm2/Vs and 500 cm2/Vs, respectively. Calculate the resistivity of the intrinsic semiconductor. The semiconductor is then doped by phosphorus to concentration of 1×1017 cm-3. Calculate the resistivity of the extrinsic semiconductor. Explain why the conductivity is improved in the latter case. Is this a p-type or n-type semiconductor? The intrinsic carrier concentration in silicon is 1.45×1010 cm-3. (10)
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T =...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b) P1. For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given:...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm o...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
Problem 3: Dopant Freezeout a) Consider a Si sample doped with arsenic (As) to a concentration 1 ...
please use knowledge of semiconductor device and fundamentals
solving these problem. thanks!
Problem 3: Dopant Freezeout a) Consider a Si sample doped with arsenic (As) to a concentration 1 X 101" cm. Estimate the temperature at which only 50% of the As atoms would be ionized. (You will need to solve a transcendental equation by iteration.) Note that the intrinsic carrier concentration has significant temperature dependence (derived on pg. 55 of Pierret's book): 3/2 19 m, m m, mo o(300...
Semiconductor Physics: A semiconductor has a intrinsic concentration of 1010 cm-3 and has donor impurity concentration o...
Semiconductor Physics: A semiconductor has a intrinsic concentration of 1010 cm-3 and has donor impurity concentration of 1015 cm-3. Light is shined (uniformly) upon the sample generating 5*1019 electron-hole pairs.cm-3s-1 with a minority carrier lifetime of 10-6 s. What is the net electron-hole recombination rate? I think at steady state, the electron-hole recombination rate is the same as the generation rate. But the current circumstances of the question make me doubt that assumption or conclusion (the question is 4 marks).
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and =...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and = 480 cm2 Nis: a. Find the resistivity p of the silicon. b. If the silicon is now doped with 101/cm-of B (Boron), find the majority and minority carrier concentrations. What is the density of fixed charge in the material (immobile ions)? C. What type of material is this (n type or p type)? d. What is the majority carrier (hole or electron)? e. Find...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300&#...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b)
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level...
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band...
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy E, and the Fermi energy E. 1. 2 marks Find an expression for Ee -Ef, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration ND. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon so that Ec- E0.2 eV. 3 marks
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b) P1. For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
please use knowledge of semiconductor device and fundamentals
solving these problem. thanks!
Problem 3: Dopant Freezeout a) Consider a Si sample doped with arsenic (As) to a concentration 1 X 101" cm. Estimate the temperature at which only 50% of the As atoms would be ionized. (You will need to solve a transcendental equation by iteration.) Note that the intrinsic carrier concentration has significant temperature dependence (derived on pg. 55 of Pierret's book): 3/2 19 m, m m, mo o(300...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and = 480 cm2 Nis: a. Find the resistivity p of the silicon. b. If the silicon is now doped with 101/cm-of B (Boron), find the majority and minority carrier concentrations. What is the density of fixed charge in the material (immobile ions)? C. What type of material is this (n type or p type)? d. What is the majority carrier (hole or electron)? e. Find...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b)
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level...
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy E, and the Fermi energy E. 1. 2 marks Find an expression for Ee -Ef, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration ND. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon so that Ec- E0.2 eV. 3 marks
Most questions answered within 3 hours.
-
1- What are 5 general characteristics of Botticelli’s
paintings?
2- Describe 5 important traits of Flemish...
asked 1 hour ago -
A golfer claims that his average golf score at the course he
plays regularly is less...
asked 1 hour ago -
On May 1, First Bank perfected a security interest in Debtor’s
inventory. On June 1, Bob...
asked 2 hours ago -
A new kind of typhoid shot is being developed by a medical
research team. The old...
asked 4 hours ago -
Write a chemical equation for these reactions. (Use
the lowest possible whole number coefficients.) Include
states-of-matter...
asked 6 hours ago -
For each of the Z-scores below, determine two probabilities
(show four three decimal places): (1) the...
asked 6 hours ago -
Oxidative phosphorylation is achieved through chemiosmotic
coupling, which turns chemical energy into osmotic potential energy
that...
asked 9 hours ago -
Hollywood Shoes would like to maintain their cash account at a
minimum level of $64,000, but...
asked 9 hours ago -
Proteins CtrA-P, DnaA, and GcrA behave similarly to what
molecule in the Eukaryotic Cell Cycle?
asked 9 hours ago -
TRUE OR FALSE
In case of a competitive tender procedure, in the request for
quotation, the...
asked 9 hours ago -
I am a little behind please provide some explanation, will
provide thumbs up.
This question considers...
asked 9 hours ago -
Let say the utility function as U(X,Y) = lnX + Y. Show that the
marginal rate...
asked 9 hours ago