At what temperature will intrinsic Si become an insulator? Assume that electron mobility is 2000cm^2/Vs and...
At what temperature will intrinsic Si become an insulator? Assume that electron mobility is 2000cm^2/Vs and hole mobility is 750cm^2/Vs.
PLEASE SOLVE USING MATLAB
Homework Answers
Write the matlab code as in function editor and save it as temp, m.file.
function f=temp(T)
f=5.1529e36-1.08e31*T.^3*exp(-1.12/(8.62e-5*T));
And now, run the code by giving the below code in command window,
T= fzero('temp',1000)
Answer will shows as,
T =
1.4744e+03
Add Answer to:
At what temperature will intrinsic Si become an insulator?
Assume that electron mobility is 2000cm^2/Vs and...
Q1. Answer the following questions about resistivity of Silicon at T=300K. Assume, electron mobility, Mn =...
Q1. Answer the following questions about resistivity of Silicon at T=300K. Assume, electron mobility, Mn = 1000cm2/Vs and hole mobility, My = 500 cm2/Vs (a) Compute the resistivity of intrinsic Si at T=300K. (5 points) (b) Compute the resistivity of the same Si (as in part (a)) after it is doped with N) = 101/cm3. (5 points) (c) Compute the resistivity of the same Si (as in part (b)) after it is counter doped with acceptor dopants with N =...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
Could i please have assistance in working out and theory for this question. Could i please...
Could i please have assistance in working out and theory for
this question. Could i please get further explanation on
how values are achieved with B and C Please
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5,...
Could i please have assistance in working out and theory for this question. a) Calculate the...
Could i please have assistance in working out and theory for
this question.
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5, calculate the conductivity of the Si intrinsic conductor if the temperature is increased to 127 °C...
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K...
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K) the intrinsic carrier concentration is 10/cm3. At this temperature the electron and hole mobilities are the equal, μ.-An-36192 cm 2/Vs. If 100 V is applied across the Ge cube at 77K, what is the current you measure?5 pt a) b) If uah4.9-107-T-166 (cm2V1s1), what is the current at 300K?5 pt
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen...
Could i please have assistance in working out and theory for this question. a) Calculate the...
Could i please have assistance in working out and theory for
this question.
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5, calculate the conductivity of the Si intrinsic conductor if the temperature is increased to 127 °C...
1 9. A bar of intrinsic Si at T=300K is shown at right. The dimensions of...
1 9. A bar of intrinsic Si at T=300K is shown at right. The dimensions of the bar are L = 10 um, W= 1 um, and t= 0.1 um. It is doped p-type with NA = 1018 /cm? The mobility is fp = 140 cm?/Vs. m; = 0.36m,. The current density is J= 1x109 A/cm² w (a) (10pts) What is the sheet resistance? (b) (10pts) What is the resistance? (c) (20pts) What is the average drift velocity of a...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
Problem #11) Please answer to the following questions: Semiconductor materials like Si and GaAs have electron-hole...
Problem #11) Please answer to the following questions: Semiconductor materials like Si and GaAs have electron-hole pairs as their intrinsic point defects. Using bonding as the starting point briefly explain why these materials don't have vacancies like metals or Schottky or Frenkel defects like ionic ceramics, as their primary intrinsic point defects.
Please make sure to answer part b.ii Mobility and Drift a) For some resistor applications, it...
Please make sure to answer part b.ii Mobility and Drift a) For some resistor applications, it is important to maintain a fixed value of resistance over a range of operating temperatures. Explain briefly how you could minimize variations (resulting from changes in temperature) in the resistivity of Si at temperatures near 300K. Assume that you are free to choose the value of resistivity. b) A (non-compensated) p-type silicon sample is maintained at room temperature. When an electric field with a...
Q1. Answer the following questions about resistivity of Silicon at T=300K. Assume, electron mobility, Mn = 1000cm2/Vs and hole mobility, My = 500 cm2/Vs (a) Compute the resistivity of intrinsic Si at T=300K. (5 points) (b) Compute the resistivity of the same Si (as in part (a)) after it is doped with N) = 101/cm3. (5 points) (c) Compute the resistivity of the same Si (as in part (b)) after it is counter doped with acceptor dopants with N =...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
Could i please have assistance in working out and theory for
this question. Could i please get further explanation on
how values are achieved with B and C Please
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5,...
Could i please have assistance in working out and theory for
this question.
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5, calculate the conductivity of the Si intrinsic conductor if the temperature is increased to 127 °C...
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K) the intrinsic carrier concentration is 10/cm3. At this temperature the electron and hole mobilities are the equal, μ.-An-36192 cm 2/Vs. If 100 V is applied across the Ge cube at 77K, what is the current you measure?5 pt a) b) If uah4.9-107-T-166 (cm2V1s1), what is the current at 300K?5 pt
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen...
Could i please have assistance in working out and theory for
this question.
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5, calculate the conductivity of the Si intrinsic conductor if the temperature is increased to 127 °C...
1 9. A bar of intrinsic Si at T=300K is shown at right. The dimensions of the bar are L = 10 um, W= 1 um, and t= 0.1 um. It is doped p-type with NA = 1018 /cm? The mobility is fp = 140 cm?/Vs. m; = 0.36m,. The current density is J= 1x109 A/cm² w (a) (10pts) What is the sheet resistance? (b) (10pts) What is the resistance? (c) (20pts) What is the average drift velocity of a...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
Problem #11) Please answer to the following questions: Semiconductor materials like Si and GaAs have electron-hole pairs as their intrinsic point defects. Using bonding as the starting point briefly explain why these materials don't have vacancies like metals or Schottky or Frenkel defects like ionic ceramics, as their primary intrinsic point defects.
Most questions answered within 3 hours.
-
Calculate the pH of each of the following solutions.
0.50 M HBr
3.1×10−4 M KOH
4.2×10−5...
asked 29 minutes ago -
For the year ended December 31, Depot Max’s cost of merchandise
sold was $85,600. Inventory at the...
asked 28 minutes ago -
Week 10 - Professional Memo Assignment
Professional Memo Assignment
Your mission for this week, should you...
asked 33 minutes ago -
Write a Python program that stores the data for each
player on the team, and it...
asked 43 minutes ago -
In
the last 3 months, mike never knows when he is going to get his
allowance...
asked 1 hour ago -
Is Ca(OH)2 a Bronsted base, Lewis base, or both? Why?
asked 57 minutes ago -
1A- Why don’t voters complain about U.S. tariffs on imported
sugar?
Because sugar is only a...
asked 1 hour ago -
Cash Payback Period
Primera Banco is evaluating two capital investment proposals for
a drive-up ATM kiosk,...
asked 1 hour ago -
Create a button in Swift (Xcode) that will create a charge,
create a charge using Stripe's...
asked 1 hour ago -
The reaction rate of CO and NO2 in the reaction
CO(g) + NO2(g) → CO2(g) +...
asked 1 hour ago -
Imagine that a chemist puts 6.40 mol each of
C3H8 and O2 in a 1.00-L container...
asked 1 hour ago -
How much money should be invested today in order to have $8340
at the end of...
asked 1 hour ago