Ignore PSpice Simulation
R1 V1 108 Q1 Q2 Q2N3904 Q2N3904 Figure 1. NPN BJT current mirror.
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Design the BJT current mirror shown in Figure 1 to replicate a 1 mA reference current at the coll...
Ignore PSpice Simulation Design the MOSFET current mirror shown in Figure 2 to replicate a 1...
Ignore PSpice Simulation
Design the MOSFET current mirror shown in Figure 2 to replicate a 1 mA reference current at the drain ofM2. Assume Vtn-1.2 V, L-100 μm, W-100 μm, kh-0.093 A/V2, and V,-100 1. Determine Ri such that IREF 1 mA is the current, Ipi, flowing into the drain of Mi. 2. Calculate lolREF, where lo = 1D2. 3. Simulate the circuit in Figure 2 in PSpice. Use the SEDRA LIB library for the MOSFET transistors and enter the...
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror sh...
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror shown next when the junction ratio between Q 2 and Q1 is equal to n # 1. In the above equation, VB is the voltage between base and emitter when the transistor is in active mode, V z is the voltage between collector and emitter at the rightmost transistor, and V is the Early voltage. REF Note: For this problem we are...
Beta = 100 10 V IRE R3 Fig. 1: A current source and mirror circuits using...
Beta = 100
10 V IRE R3 Fig. 1: A current source and mirror circuits using npn BJTS Design the current source and mirror circuit in Fig. 1 such that IREF = 10 mA (13%) nominally. Use supply of Vcc = 10 V, and use an average value for ß that you found in your previous experiments or that from the datasheet. Find the value of R, that satisfies the design requirements. In your pre- lab, perform the following: 1....
ASAP! Question 1 [Soalan 1] (a) Describe the condition when a npn BJT transistor operates in...
ASAP!
Question 1 [Soalan 1] (a) Describe the condition when a npn BJT transistor operates in saturation condition and what are the terminal currents and voltages conditions during saturation. [Terangkan keadaan bila satu transistor BJT npn beroperasi dalam keadaan tepu dan apakah keadaan arus dan voltan terminal semasa tepu. ] (20 Marks/Markah) (b) Consider the BJT transistor circuit in Figure 1. If Bpc = 100 and VBE = 0.65V, calculate: [Pertimbangkan litar transistor BJT dalam Rajah 1. Jika Bpc =...
These questions refer to the BJT current mirror shown below with Iref = 100 UA (“u”...
These questions refer to the BJT current mirror shown below with Iref = 100 UA (“u” = micro). All transistors have the same ß (beta) and VA given in questions. All output branches go to some load (dashed lines) and then to Vcc = 5 V. The area of each transistor is indicated in the figure: Qı has area “A”, Q2 has area 2A, etc. 5V Iref Io2 Io3 104 R Q2 Q3 Q4 Q1 А 2A 4A 6A Assuming...
HELP with finding 8 and 9 2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (k...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
9.49. The current mirror shown in Fig. 9.74 must deliver I1= 0.5 mA to a circuit with total power budget of 2 mW. A...
9.49. The current mirror shown in Fig. 9.74 must deliver I1= 0.5 mA to a circuit with total power budget of 2 mW. Assuming VA = 00 and B > 1, determine the required value of IREF and the relative sizes of QREE and Q1. - Vcc 2.5 V Circuit /REF QREF
9.49. The current mirror shown in Fig. 9.74 must deliver I1= 0.5 mA to a circuit with total power budget of 2 mW. Assuming VA = 00 and...
Please explain part A in details thx! Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 a...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
Consider the circuit shown in Figure 1. Transistors Q1 and Q2 are identical and can be...
Consider the circuit shown in Figure 1. Transistors Q1 and Q2
are identical and can be
describe with the following parameters: IS = 5
×10−16 A, β = 100 and VA = 5 V.
1. when Vin = 1,5V
ICQ1=ICQ2.
2. Write an equation for currents IC1 and
IC2 in terms of the voltages
Vin(VBQ1) and
VBQ2. For it
you can omit the Early effect and assume IE ≈
IC. Solve the equations to find so
Analyze the value of...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT)...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
Ignore PSpice Simulation
Design the MOSFET current mirror shown in Figure 2 to replicate a 1 mA reference current at the drain ofM2. Assume Vtn-1.2 V, L-100 μm, W-100 μm, kh-0.093 A/V2, and V,-100 1. Determine Ri such that IREF 1 mA is the current, Ipi, flowing into the drain of Mi. 2. Calculate lolREF, where lo = 1D2. 3. Simulate the circuit in Figure 2 in PSpice. Use the SEDRA LIB library for the MOSFET transistors and enter the...
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror shown next when the junction ratio between Q 2 and Q1 is equal to n # 1. In the above equation, VB is the voltage between base and emitter when the transistor is in active mode, V z is the voltage between collector and emitter at the rightmost transistor, and V is the Early voltage. REF Note: For this problem we are...
Beta = 100
10 V IRE R3 Fig. 1: A current source and mirror circuits using npn BJTS Design the current source and mirror circuit in Fig. 1 such that IREF = 10 mA (13%) nominally. Use supply of Vcc = 10 V, and use an average value for ß that you found in your previous experiments or that from the datasheet. Find the value of R, that satisfies the design requirements. In your pre- lab, perform the following: 1....
ASAP!
Question 1 [Soalan 1] (a) Describe the condition when a npn BJT transistor operates in saturation condition and what are the terminal currents and voltages conditions during saturation. [Terangkan keadaan bila satu transistor BJT npn beroperasi dalam keadaan tepu dan apakah keadaan arus dan voltan terminal semasa tepu. ] (20 Marks/Markah) (b) Consider the BJT transistor circuit in Figure 1. If Bpc = 100 and VBE = 0.65V, calculate: [Pertimbangkan litar transistor BJT dalam Rajah 1. Jika Bpc =...
These questions refer to the BJT current mirror shown below with Iref = 100 UA (“u” = micro). All transistors have the same ß (beta) and VA given in questions. All output branches go to some load (dashed lines) and then to Vcc = 5 V. The area of each transistor is indicated in the figure: Qı has area “A”, Q2 has area 2A, etc. 5V Iref Io2 Io3 104 R Q2 Q3 Q4 Q1 А 2A 4A 6A Assuming...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
9.49. The current mirror shown in Fig. 9.74 must deliver I1= 0.5 mA to a circuit with total power budget of 2 mW. Assuming VA = 00 and B > 1, determine the required value of IREF and the relative sizes of QREE and Q1. - Vcc 2.5 V Circuit /REF QREF
9.49. The current mirror shown in Fig. 9.74 must deliver I1= 0.5 mA to a circuit with total power budget of 2 mW. Assuming VA = 00 and...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
Consider the circuit shown in Figure 1. Transistors Q1 and Q2
are identical and can be
describe with the following parameters: IS = 5
×10−16 A, β = 100 and VA = 5 V.
1. when Vin = 1,5V
ICQ1=ICQ2.
2. Write an equation for currents IC1 and
IC2 in terms of the voltages
Vin(VBQ1) and
VBQ2. For it
you can omit the Early effect and assume IE ≈
IC. Solve the equations to find so
Analyze the value of...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
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