5 X 10% cm/s. 2. You are given the following information about a semiconductor sample at 27 degre...
helpp Problem 5b. - 10 Points total A semiconductor material has an energy gap of 0.75 eV, effective masses mn= 0.04 mo and mp= 0.22 mo, where mo is the free electron mass = 9.11 x 103 [kg]. Assume complete ionization. a) Let the temperature be T = 350 °K. The material is un-doped. Find the intrinsic Fermi level EFi and carrier concentration ni- pi (4 points) b) Let the temperature be T = 350 K. The material is doped...
Please help me out.. Need to pass this course as a removal for my other course.. Si material parameters: Band gap energy at 300 K: Eg = 1.124 eV Relative permittivity: x = 11.7 Effective mass of electron: m =1.08m for density of states, Effective mass of hole: m = 0.81m for density of states, m = 0.26m for conductivity m =0.39m for conductivity Up = 470 cm/V.s Mobility: Un = 1400 cm /V-s, Diffusion coefficient: Do = 36 cm²/s,...