Calculate the junction depth and the total amount of dopant introduced after pre deposition proce...
Calculate the junction depth and the total amount of dopant introduced after pre deposition process performed at 975 ° C using diborane gas for 60 minutes in a neutral ambient. Assume the substrate is n- type silicon with ND = 3.6 × 10^16 cm-3 and the boron surface concentration is Cs = 3 × 10^19cm-3.
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Calculate the junction depth and the total amount of dopant introduced after pre deposition proce...
1. Calculate the junction depth and the total amount of dopant introduced after boron predisposition performed at 950 oC...
1. Calculate the junction depth and the total amount of dopant introduced after boron predisposition performed at 950 oC for 30 minutes in a neutral ambient. Assume the substrate is n-type silicon with ND=1.8x1016 cm-3 and the boron surface concentration is Cs=1.8x1020 cm-3. Assume Do=0.76 cm2/sec and EA=3.46 eV. 2. If the sample in Prob1 is subjected to a drive in diffusion at 1050 oC for 60 min calculate the diffusion profile and junction depth.
Calculate (a) The junction depth xy and the total amount of dopant into p-type substrate with...
Calculate (a) The junction depth xy and the total amount of dopant into p-type substrate with a bulk concentration CB of 5 * 1015 cm" after phosphorous pre deposition at 1000 °C for an hour (b) The junction depth xy of the sample in (a) after drive-in diffusion at 1100 "C for unction depth , of the sample in (o) after drive-in diflsion t 110 C for 3 hours.
Please finish these questions. Thank you 1. The surface of a silicon wafer has a region that is uniformly doped with bo...
Please finish these questions. Thank you
1. The surface of a silicon wafer has a region that is uniformly doped with boron at a concentration of 1018cm3. This layer is 20Å thick (1A 104um). The entire wafer, including this region, is uniformly doped with arsenic at a concentration of 1015cm2 The surface of the wafer is sealed and it is heated at 1000° C for 30 min. Assume Do 0.037 cm2/s and EA-3.46eV for Boron in a silicon lattice at...
Calculate (a) The junction depth xy and the total amount of dopant into p-type substrate with a bulk concentration CB of 5 * 1015 cm" after phosphorous pre deposition at 1000 °C for an hour (b) The junction depth xy of the sample in (a) after drive-in diffusion at 1100 "C for unction depth , of the sample in (o) after drive-in diflsion t 110 C for 3 hours.
Please finish these questions. Thank you
1. The surface of a silicon wafer has a region that is uniformly doped with boron at a concentration of 1018cm3. This layer is 20Å thick (1A 104um). The entire wafer, including this region, is uniformly doped with arsenic at a concentration of 1015cm2 The surface of the wafer is sealed and it is heated at 1000° C for 30 min. Assume Do 0.037 cm2/s and EA-3.46eV for Boron in a silicon lattice at...
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