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Please finish these questions. Thank you 1. The surface of a silicon wafer has a region that is uniformly doped with bo...
1) An arsenic implant is performed into a bare p-type silicon wafer with a background doping of 1...
1) An arsenic implant is performed into a bare p-type silicon wafer with a background doping of 1 x1016cm-3, at an energy of 70 keV and a dose of 1 x1015 cm2. After an anneal at 950°C for 10 min, the junction depth is measured to be 0.2 um. Calculate the enhancement in the arsenic diffusion (as a ratio of (Dt)measured (Dt)expected) that was caused by the implantation damage. (5 marks)
1) An arsenic implant is performed into a bare...
(a) Silicon wafers can be made p-doped by diffusing boron into the wafer. If Boron is...
(a) Silicon wafers can be made p-doped by diffusing boron into the wafer. If Boron is diffused at 1100 °C for 5 hours. Using the diffusion equation below: dx with J is the particle flux (in cm2s1), n is the particle density (in cm-3) and D is the diffusion constant (in cm2.s1). If the concentration of Boron at the surface is 1018 cm-3, calculate the depth below the surface at which the concentration is 1017 cm-3. The Boron diffusion flux...
3. Doping of Silicon One method of introducing dopant impurities into silicon (so as to control...
3. Doping of Silicon One method of introducing dopant impurities into silicon (so as to control the electronic properties) is to depos a in layer on the surface and allow the impurity to diffuse in at a high temperature. Suppose we vapor deposit a thin layer of boron that has 2 x 1015 atoms/cm2 on the surface of a pure silicon wafer, and anneal the wafer for three hours at 1200 C. To about what depth will the boron concentration...
5. (3.8) A 10 A think, uniformly sulfur(S)-doped layer is grown on top of a GaAs...
5. (3.8) A 10 A think, uniformly sulfur(S)-doped layer is grown on top of a GaAs wafer. The doping concentration of this layer is 1018cm3. The wafer is sealed with a layer of Si3Ns to prevent any outdiffusion, and it is annealed for 60 min at 950°C. Ignore all heavy doping effects. Assume a diffusion coefficient of 3.7x10-13cm2/s. WI (a) Find the sulfur concentration at the surface after the anneal. (b) At what depth would be concentration be 101cm3?
Aluminum is diffused into a wafer of single crystal high purity silicon at a temperature of...
Aluminum is diffused into a wafer of single crystal high purity silicon at a temperature of 1100°C. Assume that the surface concentration is 1x1018 atoms Al/cm3, and the D- 2x10-12 cm2/s for aluminum diffusing into silicon at 1100°C. (a) On the right, draw a graph showing the aluminum concentration (y-axis) versus depth (x-axis) at an arbitrary time t#0. (1 pt) (b) At 1100°C, how many hours will it take to reach a concentration of 1x1017 atoms Al/cm3 at a depth...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm o...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
1. Calculate the junction depth and the total amount of dopant introduced after boron predisposition performed at 950 oC...
1. Calculate the junction depth and the total amount of dopant introduced after boron predisposition performed at 950 oC for 30 minutes in a neutral ambient. Assume the substrate is n-type silicon with ND=1.8x1016 cm-3 and the boron surface concentration is Cs=1.8x1020 cm-3. Assume Do=0.76 cm2/sec and EA=3.46 eV. 2. If the sample in Prob1 is subjected to a drive in diffusion at 1050 oC for 60 min calculate the diffusion profile and junction depth.
Problem 8 A silicon wafer is doped by Phosphorous via Diffusion at 1090°c. TCC) 1200 1000...
Problem 8 A silicon wafer is doped by Phosphorous via Diffusion at 1090°c. TCC) 1200 1000 Gaussian function. The solid solubility of phosphorous is 10 cm and the measured junction depth is 1 um at a substrate concentration of 106 cm 3. Calculate the diffusion time and the total dopant in the diffused layer. Si Cu Au Slope for E,- 1 ev 2 eV 3 eV t ev 5 eV 10-12 Al In 0.6 0.7 1000T (K-)
Please answer and show all your work. Thank you! 6- A silicon pnp transistor has impurity...
Please answer and show all your work. Thank you!
6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
1) An arsenic implant is performed into a bare p-type silicon wafer with a background doping of 1 x1016cm-3, at an energy of 70 keV and a dose of 1 x1015 cm2. After an anneal at 950°C for 10 min, the junction depth is measured to be 0.2 um. Calculate the enhancement in the arsenic diffusion (as a ratio of (Dt)measured (Dt)expected) that was caused by the implantation damage. (5 marks)
1) An arsenic implant is performed into a bare...
(a) Silicon wafers can be made p-doped by diffusing boron into the wafer. If Boron is diffused at 1100 °C for 5 hours. Using the diffusion equation below: dx with J is the particle flux (in cm2s1), n is the particle density (in cm-3) and D is the diffusion constant (in cm2.s1). If the concentration of Boron at the surface is 1018 cm-3, calculate the depth below the surface at which the concentration is 1017 cm-3. The Boron diffusion flux...
3. Doping of Silicon One method of introducing dopant impurities into silicon (so as to control the electronic properties) is to depos a in layer on the surface and allow the impurity to diffuse in at a high temperature. Suppose we vapor deposit a thin layer of boron that has 2 x 1015 atoms/cm2 on the surface of a pure silicon wafer, and anneal the wafer for three hours at 1200 C. To about what depth will the boron concentration...
5. (3.8) A 10 A think, uniformly sulfur(S)-doped layer is grown on top of a GaAs wafer. The doping concentration of this layer is 1018cm3. The wafer is sealed with a layer of Si3Ns to prevent any outdiffusion, and it is annealed for 60 min at 950°C. Ignore all heavy doping effects. Assume a diffusion coefficient of 3.7x10-13cm2/s. WI (a) Find the sulfur concentration at the surface after the anneal. (b) At what depth would be concentration be 101cm3?
Aluminum is diffused into a wafer of single crystal high purity silicon at a temperature of 1100°C. Assume that the surface concentration is 1x1018 atoms Al/cm3, and the D- 2x10-12 cm2/s for aluminum diffusing into silicon at 1100°C. (a) On the right, draw a graph showing the aluminum concentration (y-axis) versus depth (x-axis) at an arbitrary time t#0. (1 pt) (b) At 1100°C, how many hours will it take to reach a concentration of 1x1017 atoms Al/cm3 at a depth...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
Problem 8 A silicon wafer is doped by Phosphorous via Diffusion at 1090°c. TCC) 1200 1000 Gaussian function. The solid solubility of phosphorous is 10 cm and the measured junction depth is 1 um at a substrate concentration of 106 cm 3. Calculate the diffusion time and the total dopant in the diffused layer. Si Cu Au Slope for E,- 1 ev 2 eV 3 eV t ev 5 eV 10-12 Al In 0.6 0.7 1000T (K-)
Please answer and show all your work. Thank you!
6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
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