Homework Answers
Add Answer to:
Aluminum is diffused into a wafer of single crystal high purity silicon at a temperature of...
4. Arsenic is diffused into a thick slice of silicon with no previous arsenic in it...
4. Arsenic is diffused into a thick slice of silicon with no previous arsenic in it at 1100°C. If the surface concentration of the arsenic is 5.0 x 1018 atoms/cm and its concentration at 1.2 um below the silicon surface is 1.5 x 1016 atoms/cm', how long must the diffusion time be? (D = 3.0 x 10-14 cm°/s for As diffusing in Si at 1100°C.)
Please finish these questions. Thank you 1. The surface of a silicon wafer has a region that is uniformly doped with bo...
Please finish these questions. Thank you
1. The surface of a silicon wafer has a region that is uniformly doped with boron at a concentration of 1018cm3. This layer is 20Å thick (1A 104um). The entire wafer, including this region, is uniformly doped with arsenic at a concentration of 1015cm2 The surface of the wafer is sealed and it is heated at 1000° C for 30 min. Assume Do 0.037 cm2/s and EA-3.46eV for Boron in a silicon lattice at...
(a) Silicon wafers can be made p-doped by diffusing boron into the wafer. If Boron is...
(a) Silicon wafers can be made p-doped by diffusing boron into the wafer. If Boron is diffused at 1100 °C for 5 hours. Using the diffusion equation below: dx with J is the particle flux (in cm2s1), n is the particle density (in cm-3) and D is the diffusion constant (in cm2.s1). If the concentration of Boron at the surface is 1018 cm-3, calculate the depth below the surface at which the concentration is 1017 cm-3. The Boron diffusion flux...
3. Doping of Silicon One method of introducing dopant impurities into silicon (so as to control...
3. Doping of Silicon One method of introducing dopant impurities into silicon (so as to control the electronic properties) is to depos a in layer on the surface and allow the impurity to diffuse in at a high temperature. Suppose we vapor deposit a thin layer of boron that has 2 x 1015 atoms/cm2 on the surface of a pure silicon wafer, and anneal the wafer for three hours at 1200 C. To about what depth will the boron concentration...
Problem 8 A silicon wafer is doped by Phosphorous via Diffusion at 1090°c. TCC) 1200 1000...
Problem 8 A silicon wafer is doped by Phosphorous via Diffusion at 1090°c. TCC) 1200 1000 Gaussian function. The solid solubility of phosphorous is 10 cm and the measured junction depth is 1 um at a substrate concentration of 106 cm 3. Calculate the diffusion time and the total dopant in the diffused layer. Si Cu Au Slope for E,- 1 ev 2 eV 3 eV t ev 5 eV 10-12 Al In 0.6 0.7 1000T (K-)
Problem 3: A large block of high purity aluminum is placed in contact with magnesium. The...
Problem 3: A large block of high purity aluminum is placed in contact with magnesium. The materials are heated to 500°C and held at that temperature for 24 hours. What is the concentration of magnesium at a depth of 500 um into the aluminum at the end of this heat treatment? The density of magnesium is 1.74 gm/cm, respectively. At 500°C the Arrhenius parameters for the diffusion of Mg into Al are: D.= 1.2x10° (mº/s) Q = 131 kJ/mol
A large block of high purity aluminum is placed in contact with magnesium. The materials are heated to 500°C and held at...
A large block of high purity aluminum is placed in contact with magnesium. The materials are heated to 500°C and held at that temperature for 24 hours. What is the concentration of magnesium at a depth of 500 µm into the aluminum at the end of this heat treatment? The density of magnesium is 1.74 gm/cm3, respectively. At 500°C the Arrhenius parameters for the diffusion of Mg into Al are: Do= l.2xl0-4 (m2/s) Q = 131 kJ/mol
13.0 (50 pts) Consider the high temperature diffusion of Aluminum at 1368°C for 360 hours into...
13.0 (50 pts) Consider the high temperature diffusion of Aluminum at 1368°C for 360 hours into a semi-infinite solid cylinder of pure silicon having a radius R=520 E-6 m. Assume values of Do = 8.968 cm2/s, Q = 333.5 kJ/mole, R = 8.314 J/mole-K and a surface concentration 4E20 atoms/cm3. Determine the concentration at the ten (10) equally spaced distances from the surface listed below. Report concentrations in atom/cu.cm. _4E+20 Casurface a) b) c) d) e) f) g) h) i)...
4. Arsenic is diffused into a thick slice of silicon with no previous arsenic in it at 1100°C. If the surface concentration of the arsenic is 5.0 x 1018 atoms/cm and its concentration at 1.2 um below the silicon surface is 1.5 x 1016 atoms/cm', how long must the diffusion time be? (D = 3.0 x 10-14 cm°/s for As diffusing in Si at 1100°C.)
Please finish these questions. Thank you
1. The surface of a silicon wafer has a region that is uniformly doped with boron at a concentration of 1018cm3. This layer is 20Å thick (1A 104um). The entire wafer, including this region, is uniformly doped with arsenic at a concentration of 1015cm2 The surface of the wafer is sealed and it is heated at 1000° C for 30 min. Assume Do 0.037 cm2/s and EA-3.46eV for Boron in a silicon lattice at...
(a) Silicon wafers can be made p-doped by diffusing boron into the wafer. If Boron is diffused at 1100 °C for 5 hours. Using the diffusion equation below: dx with J is the particle flux (in cm2s1), n is the particle density (in cm-3) and D is the diffusion constant (in cm2.s1). If the concentration of Boron at the surface is 1018 cm-3, calculate the depth below the surface at which the concentration is 1017 cm-3. The Boron diffusion flux...
3. Doping of Silicon One method of introducing dopant impurities into silicon (so as to control the electronic properties) is to depos a in layer on the surface and allow the impurity to diffuse in at a high temperature. Suppose we vapor deposit a thin layer of boron that has 2 x 1015 atoms/cm2 on the surface of a pure silicon wafer, and anneal the wafer for three hours at 1200 C. To about what depth will the boron concentration...
Problem 8 A silicon wafer is doped by Phosphorous via Diffusion at 1090°c. TCC) 1200 1000 Gaussian function. The solid solubility of phosphorous is 10 cm and the measured junction depth is 1 um at a substrate concentration of 106 cm 3. Calculate the diffusion time and the total dopant in the diffused layer. Si Cu Au Slope for E,- 1 ev 2 eV 3 eV t ev 5 eV 10-12 Al In 0.6 0.7 1000T (K-)
Problem 3: A large block of high purity aluminum is placed in contact with magnesium. The materials are heated to 500°C and held at that temperature for 24 hours. What is the concentration of magnesium at a depth of 500 um into the aluminum at the end of this heat treatment? The density of magnesium is 1.74 gm/cm, respectively. At 500°C the Arrhenius parameters for the diffusion of Mg into Al are: D.= 1.2x10° (mº/s) Q = 131 kJ/mol
13.0 (50 pts) Consider the high temperature diffusion of Aluminum at 1368°C for 360 hours into a semi-infinite solid cylinder of pure silicon having a radius R=520 E-6 m. Assume values of Do = 8.968 cm2/s, Q = 333.5 kJ/mole, R = 8.314 J/mole-K and a surface concentration 4E20 atoms/cm3. Determine the concentration at the ten (10) equally spaced distances from the surface listed below. Report concentrations in atom/cu.cm. _4E+20 Casurface a) b) c) d) e) f) g) h) i)...
Most questions answered within 3 hours.
-
Investor company owns 35% of investee company voting stock and
accounts for the investment under the...
asked 59 minutes ago -
The number of major faults on a randomly chosen 1 km stretch of
highway has a...
asked 1 hour ago -
Consider the competitive environment of Starbuck's, Progressive
Insurance, a manufacturing firm with low turnover, or a...
asked 2 hours ago -
3. Gains from trade
Consider two neighbouring island countries called Euphoria and
Contente. They each have...
asked 4 hours ago -
A business executive has the option to invest money in two
plans: Plan A guarantees that...
asked 6 hours ago -
Hello, can someone please help me answer this question?
How much heat is absorbed by a...
asked 6 hours ago -
. A marketing researcher conducted a survey of 25 shoppers
randomly selected at the local mall...
asked 6 hours ago -
Create an comprehensive response to the
following:
Antimicrobial agents work on a multitude of microbes (bacteria,...
asked 6 hours ago -
6.13 LAB: Step counter. Section 6.3.
A pedometer treats walking 2,000 steps as walking 1 mile....
asked 6 hours ago -
(14.2) A block of mass m = 10 kg riding on a frictionless
horizontal plane is...
asked 6 hours ago -
Use any search engine to search for articles about Starbucks
partnership with Tata Companies in India...
asked 6 hours ago -
Let’s say that for some reason Bank Excess Reserves suddenly
increase sharply. What effect would this...
asked 6 hours ago