Problem 8 A silicon wafer is doped by Phosphorous via Diffusion at 1090°c. TCC) 1200 1000...
Please finish these questions. Thank you 1. The surface of a silicon wafer has a region that is uniformly doped with boron at a concentration of 1018cm3. This layer is 20Å thick (1A 104um). The entire wafer, including this region, is uniformly doped with arsenic at a concentration of 1015cm2 The surface of the wafer is sealed and it is heated at 1000° C for 30 min. Assume Do 0.037 cm2/s and EA-3.46eV for Boron in a silicon lattice at...