Question

1. Calculate the junction depth and the total amount of dopant introduced after boron predisposition performed at 950 ^oC for 30 minutes in a neutral ambient. Assume the substrate is n-type silicon with N_D=1.8x10¹⁶ cm^-3 and the boron surface concentration is C_s=1.8x10²⁰ cm^-3. Assume D_o=0.76 cm²/sec and E_A=3.46 eV.

2. If the sample in Prob1 is subjected to a drive in diffusion at 1050 ^oC for 60 min calculate the diffusion profile and junction depth.

Answer 1

1)

Given:-Temperature= 950°C , Time = 30 min ,ND = 18 * 10^16 cm^-3 Cs = 1.8 * 10^20 cm^-3 ,Do = 0.76 cm^2/sec

,EA = 3.46 eV

To find :- Junction depth ,Total amount of dopant

solution:-
0 Cancan sahon dapendm D is todependo of C -independent 。 1.eD

GoodLuck Pags No nba on indepe fuy Sustace Con canatiam Constamt 2. esfc diffu icm Characteristic-distanuf-for 「Dt 2 s

斤 C o 2- 4-711 106 -3. 820X1025

斤 C o 2- 4-711 106 -3. 820X1025

cond, hia ac pluysi 2 suttace niialcouh 2瓜 Saluhon

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