It is necessary to dope a pure silicon wafer with boron to have a conductivity 1.0 x 10% ( 2-m) 1...
It is necessary to dope a pure silicon wafer with boron to have a conductivity 1.0 x 10% ( 2-m) 1. at a distance 0.1 μm below the surface. The concentration of boron on the silicon surface is held constant at 1.0 x1025 m3. How long does the experiment have to run if the furnace is at 900 °C? The diffusion coefficient for B in Si at 1200 °C is 2.5 x10-12 cm2/s and the activation energy, Qd, is 3.87 eV.
It is necessary to dope a pure silicon wafer with boron to have a conductivity 1.0 x 10% ( 2-m) 1. at a distance 0.1 μm below the surface. The concentration of boron on the silicon surface is held constant at 1.0 x1025 m3. How long does the experiment have to run if the furnace is at 900 °C? The diffusion coefficient for B in Si at 1200 °C is 2.5 x10-12 cm2/s and the activation energy, Qd, is 3.87 eV.