Question

Please solve this question with detailed and clear steps.

I am attaching the answer from the solution manual.

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I am posting the question because the steps are not clear.

The answer from the solution manual is the following. I only need help with part a and b.

5. Consider a GaAs single drift lo-hi-lo IMPATT diode shown in Fig. 3c with an avalanche region width (where the 2 electric field is constant) of 0.4 um and a total depletion width of 3 μm. The n+ clump has a charge Q of 1.5 × 1012/cm (a) Find the breakdown voltage of the diode and the maximum field at breakdown. (b) Is the field in the drift region high enough to maintain the velocity saturation of electrons? (c) Find the operating frequency. (a) For a uniform breakdown in the avalanche region, the maximum electric field is 5. Em = 4.4 x105 V/cm. The total voltage at breakdown across the diode is S J -44x10(04x10+44x10F_1.6X10"X1.5x 1.09x1012 3-0.4x10 ー1(3-04)×104 -17.6+57.2 748V (b) The average field in the drift region is 57.2 (3-0.4)× 10-4 2.2x 103V/cm This field is high enough to maintain velocity saturation in the drift region.

Answer 1

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