voltage f an npn be? What and Ao becolle ned device in (c) is operated at 10 μΑ, find produce the st and highest values of A,? What are these values? (d) If the redesigned lor, g,1%, and Ao. Which de...
voltage f an npn be? What and Ao becolle ned device in (c) is operated at 10 μΑ, find produce the st and highest values of A,? What are these values? (d) If the redesigned lor, g,1%, and Ao. Which designs and operating conditions Figure P7 39 cases, if WIL is held at the same value 7.40 The NMOS trans ricated in pendix K erated at l is made 10 times larger, what gains result? 36 Using a CMOS technology for which (a) Neglecting the do 20 V/μm, the effect of r, f design 2 and = a = 200 μA/V -loaded CS amplifier for operation at 1feedback netwo ricated in pendix K th Vov- ed device in neglecting the you found Vos -source-load current with Vov-0.2 V. The amplifier is to have an open-circuit voltage gain of -100 V/V. Assume that current-source load is ideal. Specify L and WIL. b) Find the sm while the N process forpeak of the D7.37 The circuit in Fig. 7.15(a) is fabricated in a process for VAp tß=100 the nox Find pox (c) =-Yp = 0.5 V, and VDD-2.5 V. The two transistors have
voltage f an npn be? What and Ao becolle ned device in (c) is operated at 10 μΑ, find produce the st and highest values of A,? What are these values? (d) If the redesigned lor, g,1%, and Ao. Which designs and operating conditions Figure P7 39 cases, if WIL is held at the same value 7.40 The NMOS trans ricated in pendix K erated at l is made 10 times larger, what gains result? 36 Using a CMOS technology for which (a) Neglecting the do 20 V/μm, the effect of r, f design 2 and = a = 200 μA/V -loaded CS amplifier for operation at 1feedback netwo ricated in pendix K th Vov- ed device in neglecting the you found Vos -source-load current with Vov-0.2 V. The amplifier is to have an open-circuit voltage gain of -100 V/V. Assume that current-source load is ideal. Specify L and WIL. b) Find the sm while the N process forpeak of the D7.37 The circuit in Fig. 7.15(a) is fabricated in a process for VAp tß=100 the nox Find pox (c) =-Yp = 0.5 V, and VDD-2.5 V. The two transistors have