Assignment-2) Consider a MOS structure made out of a W gate (WM = 4.54 eV), a 4.5 nm SiO2 insulator, and a p-type Si substrate with NA = 6x1017 cm-3. Estimate the electric field in the oxide and the surface potential at zero bias.
Assignment-2) Consider a MOS structure made out of a W gate (WM = 4.54 eV), a 4.5 nm SiO2 insulator, and a p-type Si substrate with NA = 6x1017 cm-3. Estimate the electric field in the oxide and the s...
Assignment-2) Consider a MOS structure made out of a W gate (WM = 4.54 eV), a 4.5 nm SiO2 insulator, and a p-type Si substrate with NA = 6x1017 cm-3. Estimate the electric field in the oxide and the surface potential at zero bias.
a. Given an MOS structure made of p-type Si( Na 1017 cm, relative permittivity of 11.7) and SiO2 (thickness 200 À, relative permittivity of 3.9).Assume the work functions of the metal and semiconductor are equal. Find φ, wm (maximum depletion width), the threshold voltage, Vr, and the minimum value of MOS capacitance (Cmin). (15 points) VT Cin Wm Vr Cmin b. Describe several approaches to enhance the capacitance of MOS structures. (5 points)
Problem 3 (25 points) Consider a MOS capacitor with p polysilicon gate and p-type silicon substrate with NA 1016 cm3. Ef- Ev in the polysilicon gate. Assume the following parameters: I200A, , 1.5x10° cm*,E, -3.9x8.854x104FIcm ox a) (5 points) Calculate the metal-semiconductor work function difference. b) (5 points) Calculate the surface potential at the threshold inversion. c) (5 points) Calculate the depletion width (in μm) at the threshold inversion. d) (5 points) Calculate the flat band voltage. e) (5 points)...