Assignment-2) Consider a MOS structure made out of a W gate (WM = 4.54 eV), a...
Assignment-2) Consider a MOS structure made out of a W gate (WM = 4.54 eV), a 4.5 nm SiO2 insulator, and a p-type Si substrate with NA = 6x1017 cm-3. Estimate the electric field in the oxide and the surface potential at zero bias.
Homework Answers
Add Answer to:
Assignment-2) Consider a MOS structure made out
of a W gate (WM = 4.54 eV), a...
Assignment-2) Consider a MOS structure made out of a W gate (WM = 4.54 eV), a 4.5 nm SiO2 insulator, and a p-type Si substrate with NA = 6x1017 cm-3. Estimate the electric field in the oxide and the s...
Assignment-2) Consider a MOS structure made out of a W gate (WM = 4.54 eV), a 4.5 nm SiO2 insulator, and a p-type Si substrate with NA = 6x1017 cm-3. Estimate the electric field in the oxide and the surface potential at zero bias.
a. Given an MOS structure made of p-type Si( Na 1017 cm, relative permittivity of 11.7)...
a. Given an MOS structure made of p-type Si( Na 1017 cm, relative permittivity of 11.7) and SiO2 (thickness 200 À, relative permittivity of 3.9).Assume the work functions of the metal and semiconductor are equal. Find φ, wm (maximum depletion width), the threshold voltage, Vr, and the minimum value of MOS capacitance (Cmin). (15 points) VT Cin Wm Vr Cmin b. Describe several approaches to enhance the capacitance of MOS structures. (5 points)
Problem 3 (25 points) Consider a MOS capacitor with p polysilicon gate and p-type silicon substrate with NA 1016 cm3. Ef- Ev in the polysilicon gate. Assume the following parameters: I200A, , 1.5x10°...
Problem 3 (25 points) Consider a MOS capacitor with p polysilicon gate and p-type silicon substrate with NA 1016 cm3. Ef- Ev in the polysilicon gate. Assume the following parameters: I200A, , 1.5x10° cm*,E, -3.9x8.854x104FIcm ox a) (5 points) Calculate the metal-semiconductor work function difference. b) (5 points) Calculate the surface potential at the threshold inversion. c) (5 points) Calculate the depletion width (in μm) at the threshold inversion. d) (5 points) Calculate the flat band voltage. e) (5 points)...
A MOS capacitor is made on n-type silicon with oxide thickness of 50 A, a positive interface charge of 5 x 1010 cm2 and...
A MOS capacitor is made on n-type silicon with oxide thickness of 50 A, a positive interface charge of 5 x 1010 cm2 and a uniform positive oxide charge of density p- 2 x 106 cm3 throughout the oxide. The substrate is doped with Na-101" cm3 and the gate is polysilicon doped with boron just to the edge of degeneracy (p+ poly, Ef -Ev). a. Calculate the flat band voltage VB and the threshold voltage Vr b. Sketch the charge...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total n...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total negative oxide charge of 5x 1011q C/cnm2 . Substrate is n-type Si, with doping concentration 1x1016 cm3 Oxide thickness 5 nm . The electron affinity for Si is 4.03eV? a) Draw the band diagram at equilibrium. b) From part (a). What is the substrate (bulk) condition at...
Problem 3: Consider a MOS capacitor maintained at T= 300K with the following characteristics: Assume s 11.9, ox 3.9, 8.85x 10-1 F/cm, and n 1.5 x 1010cm3 Gate material is n poly-silicon Total...
Problem 3: Consider a MOS capacitor maintained at T= 300K with the following characteristics: Assume s 11.9, ox 3.9, 8.85x 10-1 F/cm, and n 1.5 x 1010cm3 Gate material is n poly-silicon Total negative oxide charge of 5x 1011q C/cm . Substrate is n-type Si, with doping concentration 1 x1016 cm-3 Oxide thickness 5 nmm The electron affinity for Si is 4.03eV? e) What is the flat capacitance? f) What is the depletion region width? g) What is the potential...
a. Given an MOS structure made of p-type Si( Na 1017 cm, relative permittivity of 11.7) and SiO2 (thickness 200 À, relative permittivity of 3.9).Assume the work functions of the metal and semiconductor are equal. Find φ, wm (maximum depletion width), the threshold voltage, Vr, and the minimum value of MOS capacitance (Cmin). (15 points) VT Cin Wm Vr Cmin b. Describe several approaches to enhance the capacitance of MOS structures. (5 points)
Problem 3 (25 points) Consider a MOS capacitor with p polysilicon gate and p-type silicon substrate with NA 1016 cm3. Ef- Ev in the polysilicon gate. Assume the following parameters: I200A, , 1.5x10° cm*,E, -3.9x8.854x104FIcm ox a) (5 points) Calculate the metal-semiconductor work function difference. b) (5 points) Calculate the surface potential at the threshold inversion. c) (5 points) Calculate the depletion width (in μm) at the threshold inversion. d) (5 points) Calculate the flat band voltage. e) (5 points)...
A MOS capacitor is made on n-type silicon with oxide thickness of 50 A, a positive interface charge of 5 x 1010 cm2 and a uniform positive oxide charge of density p- 2 x 106 cm3 throughout the oxide. The substrate is doped with Na-101" cm3 and the gate is polysilicon doped with boron just to the edge of degeneracy (p+ poly, Ef -Ev). a. Calculate the flat band voltage VB and the threshold voltage Vr b. Sketch the charge...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total negative oxide charge of 5x 1011q C/cnm2 . Substrate is n-type Si, with doping concentration 1x1016 cm3 Oxide thickness 5 nm . The electron affinity for Si is 4.03eV? a) Draw the band diagram at equilibrium. b) From part (a). What is the substrate (bulk) condition at...
Problem 3: Consider a MOS capacitor maintained at T= 300K with the following characteristics: Assume s 11.9, ox 3.9, 8.85x 10-1 F/cm, and n 1.5 x 1010cm3 Gate material is n poly-silicon Total negative oxide charge of 5x 1011q C/cm . Substrate is n-type Si, with doping concentration 1 x1016 cm-3 Oxide thickness 5 nmm The electron affinity for Si is 4.03eV? e) What is the flat capacitance? f) What is the depletion region width? g) What is the potential...
Most questions answered within 3 hours.
-
Accent Software faces the following conditions. All of these
support Accent’s use of a market-penetration pricing...
asked 55 minutes ago -
A mathematically inclined friend emails you the following
instructions: "Meet me in the cafeteria the first...
asked 58 minutes ago -
A monopoly sells in two countries . The demand curves in the two
countries are p1...
asked 1 hour ago -
A .15kg rubber ball is bounced off a wall. Before hitting the
wall, the ball moves...
asked 2 hours ago -
A manufacturing company preparing to build a new plant is
considering three potential locations for it....
asked 2 hours ago -
B. If compound Y has approximately the same values of solubility
in toluene as compound X,...
asked 3 hours ago -
Oscar Inc. has inventory in Japan valued at 39,051,000 Yen one
year ago. One year ago...
asked 3 hours ago -
If Canada suffered from "fundamental disequilibrium," and its
government choose not to devalue its currency, a...
asked 3 hours ago -
4. How many input & output Key Value Pairs are passed into,
and emitted out of...
asked 3 hours ago -
Why would your heart not function well if constructed of
skeletal muscle? What is the particular...
asked 3 hours ago -
Please respond to this essay question in full essay form for
Chemistry 1102 Organic and Biochemistry:...
asked 3 hours ago -
Determine the head loss and velocity of flow in a water supply main
of 15.0 cm...
asked 3 hours ago