Question

Problem 3: MS contact -Vcharacteristics A Schottky diode maintained at T 300K is formed between TiSiz and silicon doped with 101 cm3 phosphorus. The cross-sectional area is 100 μm 100pm-104 cm, a) Determine the reverse saturation current Is, using the measured value of Schottky barrier height given in Lecture Note. Recall from Lecture Note that the conductivity effective masses for electrons and holes in silicon are 0.26mo and 0.39mo, respectively b) Plot the forward-bias diode I-Vcharacteristic on a log-linear scale (similar to Figure 14.6a in Pierret) for VA in the range from 0V to 0.4V. At what value of VA is-1 mA? c) If the TiSi2 Fermi level is "depinned" by passivating the interface states, so that the Schottky barrier height is closer to the ideal value (determined from the metal work function Фм and silicon electron affinity 2), how would the value of Va forI-1 mA change?

Answer 1

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