11. For intrinsic silicon at 350 K, the number of charge carriers is 1x1018 m and the mobility of electrons and holes i...
The mobility values of electrons and holes in a silicon sample are 1500 cm2/Vs and 500 cm2/Vs, respectively. Calculate the resistivity of the intrinsic semiconductor. The semiconductor is then doped by phosphorus to concentration of 1×1017 cm-3. Calculate the resistivity of the extrinsic semiconductor. Explain why the conductivity is improved in the latter case. Is this a p-type or n-type semiconductor? The intrinsic carrier concentration in silicon is 1.45×1010 cm-3. (10)
Here are the equations to use: Use Eq. (2) below to calculate the intrinsic number density of conduction electrons in Si at a temperature of 405 K. You may use the values of effective mass mp 1.04mo. 09m1 where m is the mass of a free electron and the band gap energy value E- 1.12 ev, The conductivity of a semiconductor material can be expressed by where q is the elementary charge, n the number density of conduction electrons, μη...
4. Estimate the number per cm of intrinsic electrons, n, and holes. p, and calculate the electrical conductivity of Si crystal at 200 C. Take the effective mass of electrons as 0.33me and holes as 0.55m, and μ.-0.14 mm 0.038 m'N.s, Eg 1.12 eV. Please pay attention to the units used
In class Monday we established that the number density of free electrons in silicon was 1.09E+16 electrons per cubic meter. Now calculate the number of free electrons per silicon atom. The density of silicon is 2.33 Mg/m3 ; the atomic mass of silicon is 28.085 g/mole. Consider silicon which has a band gap of 1.11 eV and a measured conductivity of 0.00034 /ohmm at 300K. Its electron mobility is 0.145 m^2/(V x sec) and its hole mobility is 0.050 m^2/(V...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
Q5: a) On the axis below draw the plot for an intrinsic silicon and m-aype c Your x- axis should be temperature in Kelvin and y-axis the charge carrier S+2 +2+1-10 Marks Your x-axis should start from 0 K In your plot, clearly label the three different zones of interest along with their charge carrier concentration (m) charge carrier b) Intrinsic semiconductor Germanium (Ge) has a bandgap of 0.67eV as opposed to intrinsic Silicon which has a bandgap of 1.11...
Question 11 - M4 (16 marks) Consider the semiconductor materials Silicon (Si) and Germanium (Ge). Intrinsic Si has a bandgap of 1.11eV and Intrinsic Ge has a bandgap of 0.67eV. Extrinsic n-doped Ge can be made by adding a small amount of Antimony. 11.1) (5 marks) On a single plot of the 'number of charge carriers' on the y-axis versus 'temperature' on the x-axis, plot the temperature dependence of the number of charge carriers for Intrinsic Si, Intrinsic Ge and...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...