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QUESTION TWO (9 marks total) (a) An n-type semiconductor has a uniform excess minority carrier concentration of 5 x 101...
Semiconductor Physics: A semiconductor has a intrinsic concentration of 1010 cm-3 and has donor impurity concentration o...
Semiconductor Physics: A semiconductor has a intrinsic concentration of 1010 cm-3 and has donor impurity concentration of 1015 cm-3. Light is shined (uniformly) upon the sample generating 5*1019 electron-hole pairs.cm-3s-1 with a minority carrier lifetime of 10-6 s. What is the net electron-hole recombination rate? I think at steady state, the electron-hole recombination rate is the same as the generation rate. But the current circumstances of the question make me doubt that assumption or conclusion (the question is 4 marks).
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and No 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g' 1020 cm . The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t) versus the time t>0s b) The steady state excess carrier concentration is found to be on( is the minority carrier...
PartYour AnswerCorrect AnswerToleranceMarks Comment 4.0 1% 1.00 Correct Total: 1.0 A p-type semiconductor, doped to a...
PartYour AnswerCorrect AnswerToleranceMarks Comment 4.0 1% 1.00 Correct Total: 1.0 A p-type semiconductor, doped to a uniform concentration of 5.3 x 1015 cm-3, is exposed to a light source which generates electron-hole pairs everywhere in the semiconductor at a rate of 8.8 x 1020 cm-3s-1. The excess carrier lifetime is 0.1 us and the intrinsic carrier concentration is 6.9 x 109 cm-3. Which of the following most accurately gives the hole concentration at steady state? Assume band-to-band transition. Please choose...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
A “thin” slab (thickness d << 1/α, where α is the absorption coefficient) of GaAs semiconductor...
A “thin” slab (thickness d << 1/α, where α is the absorption coefficient) of GaAs semiconductor at T = 300 K is uniformly doped with NA = 1016 cm-3 and ND = 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g’ = 1020 cm-3s-1 through-out the slab of GaAs. The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t)...
Assume that a uniform p-type region of silicon with length L-10 μm, μη-1400 cm2/V-s, and lifetime...
Assume that a uniform p-type region of silicon with length L-10 μm, μη-1400 cm2/V-s, and lifetime t 1 us at T 300 K is uniformly illuminated by photon flux G 1019/cm2s. Assume that that all carriers are extracted at x-L (such that Δη-0), while An-1014 /cm3 at x 0. Assume that Po An everwhere. Now consider the system after reaching a steady state. 2. Write down the simplest form of the minority carrier diffusion equation that accurately describes its behavior....
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and No 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g' 1020 cm . The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t) versus the time t>0s b) The steady state excess carrier concentration is found to be on( is the minority carrier...
PartYour AnswerCorrect AnswerToleranceMarks Comment 4.0 1% 1.00 Correct Total: 1.0 A p-type semiconductor, doped to a uniform concentration of 5.3 x 1015 cm-3, is exposed to a light source which generates electron-hole pairs everywhere in the semiconductor at a rate of 8.8 x 1020 cm-3s-1. The excess carrier lifetime is 0.1 us and the intrinsic carrier concentration is 6.9 x 109 cm-3. Which of the following most accurately gives the hole concentration at steady state? Assume band-to-band transition. Please choose...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Assume that a uniform p-type region of silicon with length L-10 μm, μη-1400 cm2/V-s, and lifetime t 1 us at T 300 K is uniformly illuminated by photon flux G 1019/cm2s. Assume that that all carriers are extracted at x-L (such that Δη-0), while An-1014 /cm3 at x 0. Assume that Po An everwhere. Now consider the system after reaching a steady state. 2. Write down the simplest form of the minority carrier diffusion equation that accurately describes its behavior....
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