Homework Answers
p-type semiconductor is formed when silicon or germanium is doped with trivalent impurity such as Boron (B), Aluminium (Al), Gallium(Ga) and indium (In)
Hence the correct option is (C) Si doped with B
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Which of the following materials could be classified as a p-type semiconductor? a. Ge doped with...
Classify the following as n or p doped semiconductors and explain: (a) Ga doped Ge; (b)...
Classify the following as n or p doped semiconductors and explain: (a) Ga doped Ge; (b) As doped Si; (c) In0.49As0.51; (d) Zn1+xO, (e) LixNi1-xO.
Question 11 - M4 (16 marks) Consider the semiconductor materials Silicon (Si) and Germanium (Ge). Intrinsic Si has a ba...
Question 11 - M4 (16 marks) Consider the semiconductor materials Silicon (Si) and Germanium (Ge). Intrinsic Si has a bandgap of 1.11eV and Intrinsic Ge has a bandgap of 0.67eV. Extrinsic n-doped Ge can be made by adding a small amount of Antimony. 11.1) (5 marks) On a single plot of the 'number of charge carriers' on the y-axis versus 'temperature' on the x-axis, plot the temperature dependence of the number of charge carriers for Intrinsic Si, Intrinsic Ge and...
Section B (total 60 marks for section B) B1 a) An MOS capacitor has a p-type semiconductor substrate doped with an impu...
Section B (total 60 marks for section B) B1 a) An MOS capacitor has a p-type semiconductor substrate doped with an impurity concentration of 1018 cm3. Assume a poly-Si material is used for the gate. Draw a diagram of the capacitor structure showing material types and an energy band diagram it is in thermal equilibrium. (10 marks) b) Given an MOS capacitor with a p-type semiconductor substrate and poly-Si material as gate (in part a), what is the meaning of...
P4. a. Consider Si doped with P at 2x10^16 cm^-3. determine the carrier concentrations ni, p,...
P4. a. Consider Si doped with P at 2x10^16 cm^-3. determine the carrier concentrations ni, p, and n at T = 300 K. b. Consider a semiconductor with ni = 2.4x10^13cm-3 that is doped such that ND=5x10^13cm^-3. Determine the carrier concentrations n and p. c. Consider a compensation Ge semiconductor with ni = 2.4x10^13 cm^-3 doped at concentration NA=5x10^13 cm^-3. Determine the thermal equilibrium carrier concentration n and p.
A semiconductor sample is doped p-type with 1017 boron atoms/cm3 (assume p=Na). Where is the Fermi...
A semiconductor sample is doped p-type with 1017 boron atoms/cm3 (assume p=Na). Where is the Fermi level of the p-type material, ???, relative to the intrinsic Fermi level, ???? (for this sample at 300K, the intrinsic electron concentration ?? = 2 × 1013 ??−3 ).
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
PartYour AnswerCorrect AnswerToleranceMarks Comment 4.0 1% 1.00 Correct Total: 1.0 A p-type semiconductor, doped to a...
PartYour AnswerCorrect AnswerToleranceMarks Comment 4.0 1% 1.00 Correct Total: 1.0 A p-type semiconductor, doped to a uniform concentration of 5.3 x 1015 cm-3, is exposed to a light source which generates electron-hole pairs everywhere in the semiconductor at a rate of 8.8 x 1020 cm-3s-1. The excess carrier lifetime is 0.1 us and the intrinsic carrier concentration is 6.9 x 109 cm-3. Which of the following most accurately gives the hole concentration at steady state? Assume band-to-band transition. Please choose...
Which of the following statements concerning semiconductors is/are CORRECT? 1. The conduction of electricity in p-type...
Which of the following statements concerning semiconductors is/are CORRECT? 1. The conduction of electricity in p-type semiconductors occurs by the movement of electrons in the conduction band. 2. Doping an intrinsic semiconductor, such as silicon, with a Group 3A element will produce a p-type semiconductor. 3. An n-type semiconductor uses the movement of positive holes in the valence band to conduct electricity.
Which element, when doped into germanium, would create an n-type semiconductor? Gallium Boron O Arsenic O...
Which element, when doped into germanium, would create an n-type semiconductor? Gallium Boron O Arsenic O Aluminum
please answer only circled ones with full explanation plz cells. Si, Ge and O-Sn are approximately...
please answer only circled ones with full explanation plz
cells. Si, Ge and O-Sn are approximately 1x 10", - in each of 1 x 10°, 0.46 and 11 x 10-12 m. Rationalize this hcp; (c) trend in values. (c) How does the change in electrical resistivity with temperature vary for a e at 80K typical metal and for a semiconductor? form is 6.9 Distinguish between an intrinsic and extrinsic Suggest, semiconductor, giving examples of materials that mame is fall into...
Question 11 - M4 (16 marks) Consider the semiconductor materials Silicon (Si) and Germanium (Ge). Intrinsic Si has a bandgap of 1.11eV and Intrinsic Ge has a bandgap of 0.67eV. Extrinsic n-doped Ge can be made by adding a small amount of Antimony. 11.1) (5 marks) On a single plot of the 'number of charge carriers' on the y-axis versus 'temperature' on the x-axis, plot the temperature dependence of the number of charge carriers for Intrinsic Si, Intrinsic Ge and...
Section B (total 60 marks for section B) B1 a) An MOS capacitor has a p-type semiconductor substrate doped with an impurity concentration of 1018 cm3. Assume a poly-Si material is used for the gate. Draw a diagram of the capacitor structure showing material types and an energy band diagram it is in thermal equilibrium. (10 marks) b) Given an MOS capacitor with a p-type semiconductor substrate and poly-Si material as gate (in part a), what is the meaning of...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
PartYour AnswerCorrect AnswerToleranceMarks Comment 4.0 1% 1.00 Correct Total: 1.0 A p-type semiconductor, doped to a uniform concentration of 5.3 x 1015 cm-3, is exposed to a light source which generates electron-hole pairs everywhere in the semiconductor at a rate of 8.8 x 1020 cm-3s-1. The excess carrier lifetime is 0.1 us and the intrinsic carrier concentration is 6.9 x 109 cm-3. Which of the following most accurately gives the hole concentration at steady state? Assume band-to-band transition. Please choose...
Which element, when doped into germanium, would create an n-type semiconductor? Gallium Boron O Arsenic O Aluminum
please answer only circled ones with full explanation plz
cells. Si, Ge and O-Sn are approximately 1x 10", - in each of 1 x 10°, 0.46 and 11 x 10-12 m. Rationalize this hcp; (c) trend in values. (c) How does the change in electrical resistivity with temperature vary for a e at 80K typical metal and for a semiconductor? form is 6.9 Distinguish between an intrinsic and extrinsic Suggest, semiconductor, giving examples of materials that mame is fall into...
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