a. Using the characteristics of Fig. 3.13a, determine βdc at IB = 60 μA and VCE = 4 V.
b. Repeat part (a) at IB = 30 μA and VCE = 7 V.
c. Repeat part (a) at IB = 10 μA and VCE = 10 V.
d. Reviewing the results of parts (a) through (c), does the value of βdc change from point to point on the characteristics? Where were the higher values found? Can you develop any general conclusions about the value of βdc on a set of characteristics such as those provided in Fig. 3.13a?
FIG. 3.13 Characteristics of a silicon transistor in the common-emitter configuration: (a) collector characteristics
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