a. Using the characteristics of Fig. 3.13a, determine βac at IB = 60 μA and VCE = 4 V.b. R...

a. Using the characteristics of Fig. 3.13a, determine β_ac at I_B = 60 μA and V_CE = 4 V.

b. Repeat part (a) at I_B = 30 μA and V_CE = 7 V.

c. Repeat part (a) at I_B = 10 μA and V_CE = 10 V.

d. Reviewing the results of parts (a) through (c), does the value of β_ac change from point to point on the characteristics? Where are the high values located? Can you develop any general conclusions about the value of β_ac on a set of collector characteristics?

e. The chosen points in this exercise are the same as those employed in Problem 21. If Problem 21 was performed, compare the levels of β_dc and β_ac for each point and comment on the trend in magnitude for each quantity.

FIG 3.13. Characteristics of a silicon transistor in the common-emitter configuration: (a) collector characteristics