A 10x unit-sized inverter drives a 2x inverter at the end of the 5 mm wire from Exercise The gate capacitance is C = 2 fF/μm and the effective resistance is R = 2.5 kΩ · μm for nMOS transistors. Estimate the propagation delay using the Elmore delay model; neglect diffusion capacitance.
Exercise
Consider a 5 mm-long, 4 λ-wide metal2 wire in a 0.6 μm process. The sheet resistance is 0.08 Ω/▫ and the capacitance is 0.2 fF/μm. Construct a 3-segment π-model for the wire.
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