(a) The room-temperature electrical conductivity of a silicon specimen is 5.93 × 10–3 (Ω • m)–1. The hole concentration is known to be 7.0 × 1017 m–3. Using the electron and hole mobili- ties for silicon in Table 12.3, compute the electron concentration. (b) On the basis of the result in part (a), is the specimen intrinsic, n-type extrinsic, or p-type extrinsic? Why?
Table 12.3 Band Gap Energies, Electron and Hole Mobilities, and Intrinsic Electrical Conductivities at Room Temperature for Semiconducting Materials
Material | Band Gap eV) | Electrical Conductivity [(Ω m)–1] | Electron Mobility (m2/V s) | Hole Mobility (m2/V s) |
Elemental | ||||
Si | 1.11 | 4 × 10–4 | 0.14 | 0.05 |
Ge | 0.67 | 2.2 | 0.38 | 0.18 |
III–V Compounds | ||||
GaP | 2.25 | — | 0.03 | 0.015 |
GaAs | 1.42 | 10–6 | 0.85 | 0.04 |
InSb | 0.17 | 2 × 104 | 7.7 | 0.07 |
II–VI Compounds | ||||
CdS | 2.40 | — | 0.03 | — |
ZnTe | 2.26 | — | 0.03 | 0.01 |
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