Estimate the temperature at which GaAs has an electrical conductivity of 3.7 × 10–3 (Ω • m)–1, assuming the temperature dependence for σ of Equation 12.36. The data shown in Table 12.3 may prove helpful.
(12.36)
Table 12.3 Band Gap Energies, Electron and Hole Mobilities, and Intrinsic Electrical Conductivities at Room Temperature for Semiconducting Materials
Material | Band Gap eV) | Electrical Conductivity [(Ω m)–1] | Electron Mobility (m2/V s) | Hole Mobility (m2/V s) |
Elemental | ||||
Si | 1.11 | 4 × 10–4 | 0.14 | 0.05 |
Ge | 0.67 | 2.2 | 0.38 | 0.18 |
III–V Compounds | ||||
GaP | 2.25 | — | 0.03 | 0.015 |
GaAs | 1.42 | 10–6 | 0.85 | 0.04 |
InSb | 0.17 | 2 × 104 | 7.7 | 0.07 |
II–VI Compounds | ||||
CdS | 2.40 | — | 0.03 | — |
ZnTe | 2.26 | — | 0.03 | 0.01 |
We need at least 10 more requests to produce the solution.
0 / 10 have requested this problem solution
The more requests, the faster the answer.