5.1 Design a resistive-load inverter with R = 1kΩ, such that V0L= 0.6 V when an enhancemen...

5.1 Design a resistive-load inverter with R = 1kΩ, such that V_0L= 0.6 V when an enhancement-type nMOS driver transistor has the following parameters:

• V_DD = 5.0V

• V_TO = 1.0V

• γ = 0.2V^1/2

• λ = 0.0V^-1

• k’ = 22.0 µA/V²

(a). Determine the required aspect ratio, W/L.

(b). Determine V_IL and V_IH.

(c). Determine noise margins NM_L and NM_H.