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•• A typical dopant concentration in a silicon device is about 1022 m−3. (a) What is the ratio of the number of silicon atoms to the number of dopant atoms at this concentration? The density of silicon is 2.33 g/cm3. (b) If a manufacturing process requires that there be less than 1 uncontrolled impurity atom for every 1000 (controlled) dopant atoms, what is the allowable impurity concentration in parts per billion (1 ppb = 1 impurity atom per billion silicon atoms)?
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