The heat generated in the circuitry on the surface of a silicon chip (k = 130 W/m ∙ °C) is conducted to the ceramic substrate to which it is attached. The chip is 6 mm × 6 mm in size and 0.5 mm thick and dissipates 3 W of power. Disregarding any heat transfer through the 0.5 mm high side surfaces, determine the temperature difference between the front and back surfaces of the chip in. steady operation.
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