In the Si-MOSFET, the oxide thickness, dox = 5.3 nm and the acceptor doping in the p-substrate is 5.8 e17 cm^-3. The dielectric constants of the oxide and Si are 3.9 and 11.7 correspondingly. The intrinsic electron concentration in Si, n_i=1e10 cm^-3. The metal-semiconductor work function difference, Fi_m-Fi_s = -0.9 eV;
a) Find the body effect constant, γN.
b) Find the MOSFET flatband voltage, V_FB. (Uints: V)
c) Find the MOSFET threshold voltage, VT. (Units: V)
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In the Si-MOSFET, the oxide thickness, dox = 5.3 nm and the acceptor doping in the...
from Semiconductors class
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