Find the operating points of M1(Vgs1, Vds1, Id1) and
M2(Vgs2, Vds2, Id2) in the circuit below given vt, k and
lambda.
We need at least 10 more requests to produce the answer.
0 / 10 have requested this problem solution
The more requests, the faster the answer.
Find the operating points of M1(Vgs1, Vds1, Id1) and M2(Vgs2, Vds2, Id2) in the circuit below...
For the circuit below lambda is about 0, k is 32 mA/V^2. Find a value for Rs1 so that Id=1mA, if voltage threshold, Vt= 0.75V. Is the FET in the active operating region? Assuming that Id= 1mA as in part 1, estimate the midband voltage gain. (Capacitors are replaced with short circuits) If Rs1 is the same as you found in part 1 and k = 32 mA/V^2, BUT Vt=0.65V, estimate Id. Repeat part 2 if C3 is removed. Repeat...
3. (2 points) For the D-MOSFET circuit shown below, VDD 20 V, R1 1.8 M2, R2 200 k2, Ro 1.5 k(2, Rs = 470 ?, VGS(OFF)--5 V, and loss 10 mA. a. If the transistor is operating at IDQ = 6.4 mA and VGSQ-_1.0 V, is the MOSFET Solve for Vosa. (Extra credit: 1 point) Determine the operating point graphically (hint: first decide DC load line using two points, then use the similar procedure in the previous problem. b. c....
find V1, V2, and V3, neglecting channel length modulation. both transistors are identical kn = 0.52 mA/V^2 Vt = 0.77 V 4.2 V 4.2 V 19k 19k V2 V M1 M2 oV + 100 MA -4.2 V
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
For the amplifier shown in the circuit below, find Vo/Vsig. Here Vt=1V and kn= 0.2 mA/V2. Approximate your answer to two decimal points +15 V 10 M2 7.5 kΩ 7る 10 k2 7) s1g in
Homework 4 ELEN 3445 6) For the NMOS devices in Figure 6 below, assume that k',(W/L)= 2 mA/V?, i=0, and V1 =1V. tlov tlov Voz vozu /42 Voit HB m2 Vs27 Init Ioad &22 64A OV - lov Figure 6. Circuit for Problem 6. a) Determine Vai, VDI, Vsi, Vasi ( = VG1 - Vsi), Ipi, and Voni (ie, the on voltage of device M1). In which mode is device M1 operating? b) Determine VG2, VD2, Vs2, Vos2, Ip2, and...
1. (10 points) Find Vout in the circuit below, R 2 M2, R2 3 M2, R3-5 k2, R4 1 , V DD DD V out R4
QUESTION (3) For this circuit, VTH = 1 V (for both transistors Mi and M2) 0.01 V Re C = 2 mA/V2 M, C, Ibeas = 2 mA a) Determine the gain volv,. b) Determine the input and output resistance, Rin and Ro c) (10 points) 5 points) What is maximum peak to peak input voltage that can be -VEE applied while still keeping Mi operating in the saturation (5 points) region?
(2 points) oblems m1 m2 m 4 (Note that the vertical and horizontal scales are not the same.) Find the formula for the graph above, given that it is a polynomial, that all zeros of the polynomial are shown that the exponents of each of the zeros are the least possible, and that it passes through the point (-1.-20)
6) For the NMOS devices in Figure 6 below, assume that k',(W/L)= 2 mA/V“, 2=0, and V1 =1 V. +10v tov Voz vez Yyz Void Init Izt & zu ③ 4A -10V - TOV Figure 6. Circuit for Problem 6. a) Determine VG1, Vpi, Vsi, Vasi ( = VG1 - Vsı), Ipi, and Voni (i.e., the on voltage of device Ml). In which mode is device Ml operating? b) Determine VG2, Vp2, Vs2, VGS2, Ip2, and VON2. In which region...