For the circuit below lambda is about 0, k is 32 mA/V^2.
- Find a value for Rs1 so that Id=1mA, if voltage threshold, Vt= 0.75V. Is the FET in the active operating region?
- Assuming that Id= 1mA as in part 1, estimate the midband voltage gain. (Capacitors are replaced with short circuits)
- If Rs1 is the same as you found in part 1 and k = 32 mA/V^2, BUT Vt=0.65V, estimate Id.
- Repeat part 2 if C3 is removed.
- Repeat part 2 if lambda is about 0.1 V^-1.
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For the circuit below lambda is about 0, k is 32 mA/V^2.
Find a value for...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
#4 The accompanying circuit shows a 4-resistor biased JFET transistor Determine the values of Rp and Rs so that the Q-point is equal to, VDsq 10 V and IDg 5 mA . For the JFET take IDss = 10 mA...
#4
The accompanying circuit shows a 4-resistor biased JFET transistor Determine the values of Rp and Rs so that the Q-point is equal to, VDsq 10 V and IDg 5 mA . For the JFET take IDss = 10 mA, VP =-5 V and λ 0 . The circuit parameters are, R1-740 k, R2-22 1.85 ka, Rs-85 ㏀ and RL-3.5 ㏀. Take the power supply VDD 24 V 2- Vo R1 Vi R2 Signal generator 4-In reference to the circuit...
2. For the circuit below, the n-channel enhancement MOSFET is biased to have gm-4 mA/V Find...
2. For the circuit below, the n-channel enhancement MOSFET is biased to have gm-4 mA/V Find the mid-band voltage gain AM Design the bypass and coupling capacitors to have the three low frequency poles at 50 Hz, 10 Hz and 3 Hz, respectively. It is the rule of thumb to have a minimum total capacitance. What is the fi? If a Rs-500 Ω is inserted between the source and Cs. What the Cs should be for a same pole frequency...
6) For the NMOS devices in Figure 6 below, assume that k',(W/L)= 2 mA/V“, 2=0, and...
6) For the NMOS devices in Figure 6 below, assume that k',(W/L)= 2 mA/V“, 2=0, and V1 =1 V. +10v tov Voz vez Yyz Void Init Izt & zu ③ 4A -10V - TOV Figure 6. Circuit for Problem 6. a) Determine VG1, Vpi, Vsi, Vasi ( = VG1 - Vsı), Ipi, and Voni (i.e., the on voltage of device Ml). In which mode is device Ml operating? b) Determine VG2, Vp2, Vs2, VGS2, Ip2, and VON2. In which region...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
#4
The accompanying circuit shows a 4-resistor biased JFET transistor Determine the values of Rp and Rs so that the Q-point is equal to, VDsq 10 V and IDg 5 mA . For the JFET take IDss = 10 mA, VP =-5 V and λ 0 . The circuit parameters are, R1-740 k, R2-22 1.85 ka, Rs-85 ㏀ and RL-3.5 ㏀. Take the power supply VDD 24 V 2- Vo R1 Vi R2 Signal generator 4-In reference to the circuit...
2. For the circuit below, the n-channel enhancement MOSFET is biased to have gm-4 mA/V Find the mid-band voltage gain AM Design the bypass and coupling capacitors to have the three low frequency poles at 50 Hz, 10 Hz and 3 Hz, respectively. It is the rule of thumb to have a minimum total capacitance. What is the fi? If a Rs-500 Ω is inserted between the source and Cs. What the Cs should be for a same pole frequency...
6) For the NMOS devices in Figure 6 below, assume that k',(W/L)= 2 mA/V“, 2=0, and V1 =1 V. +10v tov Voz vez Yyz Void Init Izt & zu ③ 4A -10V - TOV Figure 6. Circuit for Problem 6. a) Determine VG1, Vpi, Vsi, Vasi ( = VG1 - Vsı), Ipi, and Voni (i.e., the on voltage of device Ml). In which mode is device Ml operating? b) Determine VG2, Vp2, Vs2, VGS2, Ip2, and VON2. In which region...
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