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3. Consider the amplifier of the figure below with VDD 1.8 V, RD 17.5 kQ, and...
+20 V RD 10 Mn 6 kn The NMOS in the circuit shown has the following...
+20 V RD 10 Mn 6 kn The NMOS in the circuit shown has the following parameters and is operating in the saturation region: Vtn= 1 V and kn' (W/L) 0.025 mA/V2 Determine the value of Rp needed to set VDs 10 V. RD 4.00 kQ RD 3.00 k RD 3.88 kQ RD 1.22 k
Consider an n-channel MOSFET (Von = 0.4 V and K = 3.0 mA/V2). Let VDD =...
Consider an n-channel MOSFET (Von = 0.4 V and K = 3.0
mA/V2). Let VDD = 5.0 V, VSS =
-5.0 V, R1 = 14.0 kohm, R2 = 6.0 kohm,
RD = 1.2 kohm and RS = 0.5 kohm. Answer the
following questions assuming the transistor is at its saturation
mode.
a) Calculate VG versus ground (not VGS)
(hint: voltage division by R1 and R2 between
VDD and VSS).
b) Calculate VGS. (hint: IDS obtained by
formula = IDS obtained...
Just question iv）plz n operational amplifier circuit is shown in Figure 3-1 +5 V 25 kQ...
Just question iv）plz
n operational amplifier circuit is shown in Figure 3-1 +5 V 25 kQ 12.5 k2 5 kQ D, Figure 3-1. i) Show that when the input voltage V, is set at 0 V, diode Dz is off and diode Di has a current of 0.20 mA flowing through it. ii) Show that when v 1 V, Di is just beginning to stop conducting, whereas D2 is just beginning to start conducting. iii) Construct the VTC for this...
3. (2 points) For the D-MOSFET circuit shown below, VDD 20 V, R1 1.8 M2, R2...
3. (2 points) For the D-MOSFET circuit shown below, VDD 20 V, R1 1.8 M2, R2 200 k2, Ro 1.5 k(2, Rs = 470 ?, VGS(OFF)--5 V, and loss 10 mA. a. If the transistor is operating at IDQ = 6.4 mA and VGSQ-_1.0 V, is the MOSFET Solve for Vosa. (Extra credit: 1 point) Determine the operating point graphically (hint: first decide DC load line using two points, then use the similar procedure in the previous problem. b. c....
Please answer clearly Question 2 The amplifier shown in Figure 2 has the following parameters: Kn(W/L)-1 mA/V2, V-1 V Determine a) Voltage gain (Vo/vi) b) Input resistance (R) c) Output resistance (R...
Please answer clearly
Question 2 The amplifier shown in Figure 2 has the following parameters: Kn(W/L)-1 mA/V2, V-1 V Determine a) Voltage gain (Vo/vi) b) Input resistance (R) c) Output resistance (Ro) d) Maximum output voltage swing so as the amplifier stays in saturation mode. Assume VDD-20 V, R1-2.5 ΚΩ, R2-1KQ, R3-0.5 ΚΩ, R4-5 MQ, R5_1ΜΩ. R4 R1 R5 R2 Ro R3
Question 2 The amplifier shown in Figure 2 has the following parameters: Kn(W/L)-1 mA/V2, V-1 V Determine a)...
An n-channel enhancement-mode MOSFET is as shown in figure. VDD = 15V ; K = 0.3...
An n-channel enhancement-mode MOSFET is as shown in figure.
VDD = 15V ; K = 0.3 mA/V ; Vt =
3V. Also given: R1 = 5.6 Mega-ohms ;
R2 = 5 Mega-ohms ; RD = 2.8 K-ohms ;
RS = 1.2 K-ohms
Find the following quantities:
a.) in mA
b.) in V
c.) in V
d.) Choose the correct operating region from the following:
Ohmic Region, Cutoff Region, or Saturation Region?
O VOD р а и - - We were unable...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristic...
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristics in figure 1b, not the equations in your textbook, to answer the following A) From figure lb estimate gm and ro for the FET in the saturation region. Include calculations or an explanation with your answer B Find the values for Re Rd. VDD and VGG so that zin- 100k, zout 5k, L 2 mA and Vds-5 C) Find the GAIN-vo/vi 2oUT Rg...
10 V 10 V R1 Uo R2 Fig.1 CS Amplifier (2) 12 pts] Consider the circuit...
10 V 10 V R1 Uo R2 Fig.1 CS Amplifier (2) 12 pts] Consider the circuit for a CS amplifier shown in Fig.1 above. This time around, let λ-0.05 V-1 and kn-0.1 mA/V". Also, VDD-10 V and RD-5 kf2. Given that the output resistance of the amplifier (seen looking to the left of the output coupling capacitor) should be no less than 80% of RD, what is the maximun value of gm that can be achieved? Compute the associated values...
QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH...
QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH =1 V Rp R, C. K 1 mA/V2 2 0.1 R Given: Vcc 2 mA, 10 V, lbias Ct C2 0, 5 k2, RD 2 k2 RI 10 k, R2 R (12 points) a) Determine the small signal gain, vo/Vin. (4 points) b) Determine the input resistance, Rin. (4 points) c) Determine the output resistance, Ro. Useful formulae: for n-channel MOSFET triode region =...
+20 V RD 10 Mn 6 kn The NMOS in the circuit shown has the following parameters and is operating in the saturation region: Vtn= 1 V and kn' (W/L) 0.025 mA/V2 Determine the value of Rp needed to set VDs 10 V. RD 4.00 kQ RD 3.00 k RD 3.88 kQ RD 1.22 k
Consider an n-channel MOSFET (Von = 0.4 V and K = 3.0
mA/V2). Let VDD = 5.0 V, VSS =
-5.0 V, R1 = 14.0 kohm, R2 = 6.0 kohm,
RD = 1.2 kohm and RS = 0.5 kohm. Answer the
following questions assuming the transistor is at its saturation
mode.
a) Calculate VG versus ground (not VGS)
(hint: voltage division by R1 and R2 between
VDD and VSS).
b) Calculate VGS. (hint: IDS obtained by
formula = IDS obtained...
Just question iv）plz
n operational amplifier circuit is shown in Figure 3-1 +5 V 25 kQ 12.5 k2 5 kQ D, Figure 3-1. i) Show that when the input voltage V, is set at 0 V, diode Dz is off and diode Di has a current of 0.20 mA flowing through it. ii) Show that when v 1 V, Di is just beginning to stop conducting, whereas D2 is just beginning to start conducting. iii) Construct the VTC for this...
3. (2 points) For the D-MOSFET circuit shown below, VDD 20 V, R1 1.8 M2, R2 200 k2, Ro 1.5 k(2, Rs = 470 ?, VGS(OFF)--5 V, and loss 10 mA. a. If the transistor is operating at IDQ = 6.4 mA and VGSQ-_1.0 V, is the MOSFET Solve for Vosa. (Extra credit: 1 point) Determine the operating point graphically (hint: first decide DC load line using two points, then use the similar procedure in the previous problem. b. c....
Please answer clearly
Question 2 The amplifier shown in Figure 2 has the following parameters: Kn(W/L)-1 mA/V2, V-1 V Determine a) Voltage gain (Vo/vi) b) Input resistance (R) c) Output resistance (Ro) d) Maximum output voltage swing so as the amplifier stays in saturation mode. Assume VDD-20 V, R1-2.5 ΚΩ, R2-1KQ, R3-0.5 ΚΩ, R4-5 MQ, R5_1ΜΩ. R4 R1 R5 R2 Ro R3
Question 2 The amplifier shown in Figure 2 has the following parameters: Kn(W/L)-1 mA/V2, V-1 V Determine a)...
An n-channel enhancement-mode MOSFET is as shown in figure.
VDD = 15V ; K = 0.3 mA/V ; Vt =
3V. Also given: R1 = 5.6 Mega-ohms ;
R2 = 5 Mega-ohms ; RD = 2.8 K-ohms ;
RS = 1.2 K-ohms
Find the following quantities:
a.) in mA
b.) in V
c.) in V
d.) Choose the correct operating region from the following:
Ohmic Region, Cutoff Region, or Saturation Region?
O VOD р а и - - We were unable...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristics in figure 1b, not the equations in your textbook, to answer the following A) From figure lb estimate gm and ro for the FET in the saturation region. Include calculations or an explanation with your answer B Find the values for Re Rd. VDD and VGG so that zin- 100k, zout 5k, L 2 mA and Vds-5 C) Find the GAIN-vo/vi 2oUT Rg...
10 V 10 V R1 Uo R2 Fig.1 CS Amplifier (2) 12 pts] Consider the circuit for a CS amplifier shown in Fig.1 above. This time around, let λ-0.05 V-1 and kn-0.1 mA/V". Also, VDD-10 V and RD-5 kf2. Given that the output resistance of the amplifier (seen looking to the left of the output coupling capacitor) should be no less than 80% of RD, what is the maximun value of gm that can be achieved? Compute the associated values...
QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH =1 V Rp R, C. K 1 mA/V2 2 0.1 R Given: Vcc 2 mA, 10 V, lbias Ct C2 0, 5 k2, RD 2 k2 RI 10 k, R2 R (12 points) a) Determine the small signal gain, vo/Vin. (4 points) b) Determine the input resistance, Rin. (4 points) c) Determine the output resistance, Ro. Useful formulae: for n-channel MOSFET triode region =...
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