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![517 Kn= 500 MA 5 T r2 Kw=lV sa Vo =Vs Як Io for saturation -07 I - Un Cox W [Vas- Vin]? where un cot =Kn Vas= Va-vs Va= 5V,](http://img.homeworklib.com/questions/7d332d30-de8d-11ea-8495-412e5eb69e23.png?x-oss-process=image/resize,w_560)
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Consider the following circuit. Assume that the transistor is in saturation with Kn= 5000A/V2, VTN =...
Consider the following circuit. Assume that the transistor is in saturation with Vds = 2V. Further...
Consider the following circuit. Assume that the transistor is in saturation with Vds = 2V. Further a.sume that kn = 4mA/V and VTN = 1V. Determine ID, Vo and Vin. 5V T 4.6K Vo Vin 1.4K
In the circuit in Figure P3.26, the transistor parameters are VTN = 0.8 V and Kn = 0.5 mA/V2.
In the circuit in Figure P3.26, the transistor parameters are VTN = 0.8 V and Kn = 0.5 mA/V2. Calculate VGS, ID, and VDS.
Consider an nMOS transistor with VTH = 0.4 V, Kn = 140μA/V2 , length, L =...
Consider an nMOS transistor with VTH = 0.4 V, Kn = 140μA/V2 , length, L = 0.25μm, and width, W = 1.25μm. (a) Given that VGS = 1V, determine the range of values of VDS for which the device is in the saturation region. (b) Given that VGS = 1V, determine the range of values of VDS for which the device is in the triode/linar region. (c) Plot IDS vs VGS for operation in the saturation region. Ignore channel length...
3. (25%) Consider the following circuit. We have that VTN = 1V, K, = 10 mA/V²....
3. (25%) Consider the following circuit. We have that VTN = 1V, K, = 10 mA/V². Remember that the saturation equation is Ip = ½ K, (Vcs - VIN)². Do the circuit analysis and check the conditions to determine if the transistor is in saturation. +7V Ikn +3V Ikn
3. (20 points) In the circuit shown below, the transistor is characterized by Vi=1V, kn= 4...
3. (20 points) In the circuit shown below, the transistor is characterized by Vi=1V, kn= 4 mA/V2 and 1 = 0. Find the labeled voltages V and V2. +5V § 21 ,v ما 2ma -5V
Consider the following current mirror combination, where all transistors have the same kn'(W/L) =...
Consider the following current mirror
combination, where all transistors have the same
kn'(W/L) =
kp'(W/L) =
2mA/V2, and VTN =
1V, VTP = -1V. It is also given that VDD1 =
10V, VDD2 = 8V. Remember that for saturation the drain
current is given by ID = ½
kn'(W/L)
(VGS –
VTN)2 for NMOS and
ID = ½
kp'(W/L)
(VGS –
VTP)2 for PMOS. You can
ignore the channel modulation for all transistors.
Find the value of R so that...
Question l Consider the following circuit. Assume that VTN- 1 V, Kn = 1.5 mA/V, and...
Question l Consider the following circuit. Assume that VTN- 1 V, Kn = 1.5 mA/V, and ? = 0. Sketch ID versus VDs for 0 Vos 5 V. Label and add numerical values on each the axis. Calculate and indicate VDs(sat) on the plot. Clearly indicate the saturation and Ohmic regions and the saturation current. (5 points) 2 V DS
a)Calculate Ronof an NMOS FET transistor for VGS=2Vand5V if VTN= 1.5V, Kn= 300μA/V2.b)What value of VGSisrequired...
a)Calculate Ronof an NMOS FET transistor for VGS=2Vand5V if VTN= 1.5V, Kn= 300μA/V2.b)What value of VGSisrequired for Ron= 2kW?c)Find the drain current(Id)and transconductance (gm) of an NMOS FET transistor operating with VGS=3.0V, VTN= 1.0V, VDS= 3.0V, Kn= 1.0mA/V2.
For the transistor in the circuit shown below, VTN = 0.8 V, lambda = 0, and...
For the transistor in the circuit shown below, VTN =
0.8 V, lambda = 0, and Kn = 0.25 mA/V2.
Determine the small-signal voltage gain of the circuit.
pр +5 V DD R 5 k R,-600 k Cci Cc2 R, 400 k T
4. For the NOR circuit of previous problem, consider the case where Vi is high, but V2 is low. Find the value of Rc to keep the output transistor at the edge pf saturation. VBE.ON-0.6V, VBc,ON-0....
4. For the NOR circuit of previous problem, consider the case where Vi is high, but V2 is low. Find the value of Rc to keep the output transistor at the edge pf saturation. VBE.ON-0.6V, VBc,ON-0.4V, VCESAT-0.2V, RB-R'B-10k2, Vcc-5V, VA-o, R'B Rc Q2 Q1 V2
4. For the NOR circuit of previous problem, consider the case where Vi is high, but V2 is low. Find the value of Rc to keep the output transistor at the edge pf saturation. VBE.ON-0.6V,...
Consider the following circuit. Assume that the transistor is in saturation with Vds = 2V. Further a.sume that kn = 4mA/V and VTN = 1V. Determine ID, Vo and Vin. 5V T 4.6K Vo Vin 1.4K
3. (25%) Consider the following circuit. We have that VTN = 1V, K, = 10 mA/V². Remember that the saturation equation is Ip = ½ K, (Vcs - VIN)². Do the circuit analysis and check the conditions to determine if the transistor is in saturation. +7V Ikn +3V Ikn
3. (20 points) In the circuit shown below, the transistor is characterized by Vi=1V, kn= 4 mA/V2 and 1 = 0. Find the labeled voltages V and V2. +5V § 21 ,v ما 2ma -5V
Consider the following current mirror
combination, where all transistors have the same
kn'(W/L) =
kp'(W/L) =
2mA/V2, and VTN =
1V, VTP = -1V. It is also given that VDD1 =
10V, VDD2 = 8V. Remember that for saturation the drain
current is given by ID = ½
kn'(W/L)
(VGS –
VTN)2 for NMOS and
ID = ½
kp'(W/L)
(VGS –
VTP)2 for PMOS. You can
ignore the channel modulation for all transistors.
Find the value of R so that...
Question l Consider the following circuit. Assume that VTN- 1 V, Kn = 1.5 mA/V, and ? = 0. Sketch ID versus VDs for 0 Vos 5 V. Label and add numerical values on each the axis. Calculate and indicate VDs(sat) on the plot. Clearly indicate the saturation and Ohmic regions and the saturation current. (5 points) 2 V DS
For the transistor in the circuit shown below, VTN =
0.8 V, lambda = 0, and Kn = 0.25 mA/V2.
Determine the small-signal voltage gain of the circuit.
pр +5 V DD R 5 k R,-600 k Cci Cc2 R, 400 k T
4. For the NOR circuit of previous problem, consider the case where Vi is high, but V2 is low. Find the value of Rc to keep the output transistor at the edge pf saturation. VBE.ON-0.6V, VBc,ON-0.4V, VCESAT-0.2V, RB-R'B-10k2, Vcc-5V, VA-o, R'B Rc Q2 Q1 V2
4. For the NOR circuit of previous problem, consider the case where Vi is high, but V2 is low. Find the value of Rc to keep the output transistor at the edge pf saturation. VBE.ON-0.6V,...
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