a)Calculate Ronof an NMOS FET transistor for VGS=2Vand5V if VTN= 1.5V, Kn= 300μA/V2.b)What value of VGSisrequired...
a)Calculate Ronof an NMOS FET transistor for VGS=2Vand5V if VTN= 1.5V, Kn= 300μA/V2.b)What value of VGSisrequired for Ron= 2kW?c)Find the drain current(Id)and transconductance (gm) of an NMOS FET transistor operating with VGS=3.0V, VTN= 1.0V, VDS= 3.0V, Kn= 1.0mA/V2.
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a)Calculate Ronof an NMOS FET transistor for VGS=2Vand5V if VTN=
1.5V, Kn= 300μA/V2.b)What value of VGSisrequired...
Q2: Consider an NMOS FET having W = 160um, L = 2um, Kn' = 50uA/V2, VIN=...
Q2: Consider an NMOS FET having W = 160um, L = 2um, Kn' = 50uA/V2, VIN= 2V and 2=0. Find out the regions of operation (cut-off, triode, saturation) and the drain current id for the following conditions: a) VGS = 1 V and Vds = 3V b) VGS = 3V and vps = 0.5V c) VGS = 3V and Vds = 5V
In the circuit in Figure P3.26, the transistor parameters are VTN = 0.8 V and Kn = 0.5 mA/V2.
In the circuit in Figure P3.26, the transistor parameters are VTN = 0.8 V and Kn = 0.5 mA/V2. Calculate VGS, ID, and VDS.
2. (25 pts) An NMOS transistor operating in the linearregion with VDs 50mV is measured to...
2. (25 pts) An NMOS transistor operating in the linearregion with VDs 50mV is measured to have a drain current of 25μΑ for VGs* IV (Case I) and 50μΑ for VGs* 1.5V (Case II). a. (5 pts) Calculate the threshold voltage ofthe NMOS transistor b. (5 pts) Calculate the resistance between drain and source for each case c. (5 pts) Calculate the device aspect ratio W/L iKn_ 50μΑ/. d. (5 pts) Calculate the drain current of the NMOS transistor if...
Consider an nMOS transistor with VTH = 0.4 V, Kn = 140μA/V2 , length, L =...
Consider an nMOS transistor with VTH = 0.4 V, Kn = 140μA/V2 , length, L = 0.25μm, and width, W = 1.25μm. (a) Given that VGS = 1V, determine the range of values of VDS for which the device is in the saturation region. (b) Given that VGS = 1V, determine the range of values of VDS for which the device is in the triode/linar region. (c) Plot IDS vs VGS for operation in the saturation region. Ignore channel length...
Q3. For the three circuits a) Give the transistor bias state, b) Write the appropriate model...
Q3. For the three circuits a) Give the transistor bias state, b) Write the appropriate model equation, c) Calculate ID, where W/L = 2, Vtn=0.4V, and K'n = 20011A/V2 10V 2V 2V 2V 18 kΩ 12 kΩ Q4. IfVin-08. K'n= 100μA/V2, and W/1-4, calculate VG so that ID-2001L. 5V Current Equations Cut-Off Region: ID -0 when Vgs< Vtn Ohmic Region or Linear Region: Io K'nx WL ((Vgs-Vtn) x Vds-V'ds/2) when (Vgs Vtn)> Vds Saturation Region: IK'n/2x W/L (Vgs Vtn) when...
An NMOS transistor with parameters VTh=1 V, k’=100 uA/V2 , W = 10 um, and L=1...
An NMOS transistor with parameters VTh=1 V, k’=100 uA/V2 , W = 10 um, and L=1 um has a VGS=2 V. Find the drain current when: a. VDS=0.5 V b. VDS=2 V c. VDS=3 V Answers: a) 374 uA b) 0.5 mA c) 0.5 mA please show your work :)
In the amplifier circuit below, the transistor has the following properties:Vt =1.5V,k’n=100 microA/V2,W=2 micro m ,L=0.2...
In the amplifier circuit below, the transistor has the following
properties:Vt =1.5V,k’n=100 microA/V2,W=2 micro m ,L=0.2 micro m,
lambda = 0V^-1
a. Find the dc values VG, VD, and VS.
b. Verify (prove) that the circuit is in the proper region of
operation for an amplifier
c. Find the transconductance value, gm
d. Draw the equivalent small-signal circuit model, replacing the
NMOS with its pi-model
e. Draw the equivalent small-signal circuit model, replacing the
NMOS with its T-model
f. Calculate...
1) For the following four FET circuits, the FET parameters are VTN 2.6Vand KN0.06 A/V2. For...
1) For the following four FET circuits, the FET parameters are VTN 2.6Vand KN0.06 A/V2. For each circuit, the bias point (Q-point) is the same. A) Find for Vas Vos lo. In all cases, verify that the transistor is "on" and operating ina saturated region. B) On a single, Ip (y-axis) versus Vos (x-axis) plot, sketch the load line for each of the four circuits. Voo+20V Ro" 271 Ω R, 20 ka VoD+10V RG 10 kn RS-729 Ω VDO Voo...
You will be given the IBM 0.13um PMOS and NMOS model files. 1) From the model...
You will be given the IBM 0.13um PMOS and NMOS model files. 1) From the model files, find out K' for both NMOS and PMOS. 2) For W/L=10um/0.13um, plot the drain current of an NMOS as a function of Vps when Vos varies from 0 to 1.5V, assuming Vos= 0.3V.0.6V, 0.9V, 1.2V, and 1.5V, and Ves=0. 3) Estimate of this transistor (Assume De=0.3 V). 4) Repeat 2) but with Vse=0.3V. 5) Estimate y (body effect) of this transistor. 6) Calculate...
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region o...
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c)...
Q2: Consider an NMOS FET having W = 160um, L = 2um, Kn' = 50uA/V2, VIN= 2V and 2=0. Find out the regions of operation (cut-off, triode, saturation) and the drain current id for the following conditions: a) VGS = 1 V and Vds = 3V b) VGS = 3V and vps = 0.5V c) VGS = 3V and Vds = 5V
2. (25 pts) An NMOS transistor operating in the linearregion with VDs 50mV is measured to have a drain current of 25μΑ for VGs* IV (Case I) and 50μΑ for VGs* 1.5V (Case II). a. (5 pts) Calculate the threshold voltage ofthe NMOS transistor b. (5 pts) Calculate the resistance between drain and source for each case c. (5 pts) Calculate the device aspect ratio W/L iKn_ 50μΑ/. d. (5 pts) Calculate the drain current of the NMOS transistor if...
Q3. For the three circuits a) Give the transistor bias state, b) Write the appropriate model equation, c) Calculate ID, where W/L = 2, Vtn=0.4V, and K'n = 20011A/V2 10V 2V 2V 2V 18 kΩ 12 kΩ Q4. IfVin-08. K'n= 100μA/V2, and W/1-4, calculate VG so that ID-2001L. 5V Current Equations Cut-Off Region: ID -0 when Vgs< Vtn Ohmic Region or Linear Region: Io K'nx WL ((Vgs-Vtn) x Vds-V'ds/2) when (Vgs Vtn)> Vds Saturation Region: IK'n/2x W/L (Vgs Vtn) when...
In the amplifier circuit below, the transistor has the following
properties:Vt =1.5V,k’n=100 microA/V2,W=2 micro m ,L=0.2 micro m,
lambda = 0V^-1
a. Find the dc values VG, VD, and VS.
b. Verify (prove) that the circuit is in the proper region of
operation for an amplifier
c. Find the transconductance value, gm
d. Draw the equivalent small-signal circuit model, replacing the
NMOS with its pi-model
e. Draw the equivalent small-signal circuit model, replacing the
NMOS with its T-model
f. Calculate...
1) For the following four FET circuits, the FET parameters are VTN 2.6Vand KN0.06 A/V2. For each circuit, the bias point (Q-point) is the same. A) Find for Vas Vos lo. In all cases, verify that the transistor is "on" and operating ina saturated region. B) On a single, Ip (y-axis) versus Vos (x-axis) plot, sketch the load line for each of the four circuits. Voo+20V Ro" 271 Ω R, 20 ka VoD+10V RG 10 kn RS-729 Ω VDO Voo...
You will be given the IBM 0.13um PMOS and NMOS model files. 1) From the model files, find out K' for both NMOS and PMOS. 2) For W/L=10um/0.13um, plot the drain current of an NMOS as a function of Vps when Vos varies from 0 to 1.5V, assuming Vos= 0.3V.0.6V, 0.9V, 1.2V, and 1.5V, and Ves=0. 3) Estimate of this transistor (Assume De=0.3 V). 4) Repeat 2) but with Vse=0.3V. 5) Estimate y (body effect) of this transistor. 6) Calculate...
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c)...
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