Question

1) For the following four FET circuits, the FET parameters are VTN 2.6Vand KN0.06 A/V2. For each circuit, the bias point (Q-point) is the same. A) Find for Vas Vos lo. In all cases, verify that the transistor is on and operating ina saturated region. B) On a single, Ip (y-axis) versus Vos (x-axis) plot, sketch the load line for each of the four circuits. Voo+20V Ro 271 Ω R, 20 ka VoD+10V RG 10 kn RS-729 Ω VDO Voo +10V R2 3.529 kn Voo 20V R1 20 kn R1 20 kn Ro 500 Ω R2 51.08 kn R2 12.787 k2 RS-500 Ω

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