2. (25 pts) An NMOS transistor operating in the linearregion with VDs 50mV is measured to...
nMOS transistor is biased width Vds = 2 V and Vgs = 1.1 V. Assume k = 2 mA and VT = 0.5 V. Calculate the drain current in mA.
a)Calculate Ronof an NMOS FET transistor for VGS=2Vand5V if VTN= 1.5V, Kn= 300μA/V2.b)What value of VGSisrequired for Ron= 2kW?c)Find the drain current(Id)and transconductance (gm) of an NMOS FET transistor operating with VGS=3.0V, VTN= 1.0V, VDS= 3.0V, Kn= 1.0mA/V2.
5. An NMOS transistor having V, = 1V is operated in the linear region with vps small. With Vos=1.5V, it is found to have a resistance rns of Ik2. What value of Vas is required to obtain rps = 2002? Find the corresponding resistance values obtained with a device having twice the value of W.
You will be given the IBM 0.13um PMOS and NMOS model files. 1) From the model files, find out K' for both NMOS and PMOS. 2) For W/L=10um/0.13um, plot the drain current of an NMOS as a function of Vps when Vos varies from 0 to 1.5V, assuming Vos= 0.3V.0.6V, 0.9V, 1.2V, and 1.5V, and Ves=0. 3) Estimate of this transistor (Assume De=0.3 V). 4) Repeat 2) but with Vse=0.3V. 5) Estimate y (body effect) of this transistor. 6) Calculate...
Q5. Below figure is a LONG-channel NMOS device biased with two voltage source (Ves and Vos). Assuming this NMOS has a threshold voltage V, of 0.5V, mobility 350cm-NV m, oxide thickness of 10nm, and relative permittivity of 3.9. Calculate the drain current Ing with below bias configurations: (0) Ves = 2V, Vos = 1V, W/L = 4; (ii) Vas = 1V, Vos = 3V, W/L = 2;
2. An NMOS transistor fabricated in a technology for which uC=400 ĻA/V2 and V=0.4V is required to operate with a small Vps as a variable resistor ranging in value from 0.2 k 2 to 1k12. (a) The Vos voltage is 1.8V and corresponding resistor is 0.2k12. Calculate W/L of MOSFET? (10 pts) (b) With same MOSFET, what is the Vgs to achieve a resistor of lk32? (10 points)
2. An NMOS transistor fabricated in a technology for which uC=400 ĻA/V2 and V=0.4V is required to operate with a small Vps as a variable resistor ranging in value from 0.2 k 2 to 1k12. (a) The Vos voltage is 1.8V and corresponding resistor is 0.2k12. Calculate W/L of MOSFET? (10 pts) (b) With same MOSFET, what is the Vgs to achieve a resistor of lk32? (10 points)
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c)...
the Ebers-Moll VT = kB T/e. (c) Use your result from part (b) to find the resistance Rg necessary to generate 7.5μΑ of current with 20μΑ of programming current. (programming 6. FET I-V Curves. [10 pts.] Consider the family of I- V curves for a field effect transistor (FET) shown below. (a) Are the curves shown for a JFET or or an en- hancement mode MOSFET? Explain briefly how you know. (b) Table values for the given gain-source volt- ages...
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...