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2. An NMOS transistor fabricated in a technology for which uC=400 ĻA/V2 and V=0.4V is required...
2. An NMOS transistor fabricated in a technology for which uC=400 ĻA/V2 and V=0.4V is required...
2. An NMOS transistor fabricated in a technology for which uC=400 ĻA/V2 and V=0.4V is required to operate with a small Vps as a variable resistor ranging in value from 0.2 k 2 to 1k12. (a) The Vos voltage is 1.8V and corresponding resistor is 0.2k12. Calculate W/L of MOSFET? (10 pts) (b) With same MOSFET, what is the Vgs to achieve a resistor of lk32? (10 points)
2. (25 pts) An NMOS transistor operating in the linearregion with VDs 50mV is measured to...
2. (25 pts) An NMOS transistor operating in the linearregion with VDs 50mV is measured to have a drain current of 25μΑ for VGs* IV (Case I) and 50μΑ for VGs* 1.5V (Case II). a. (5 pts) Calculate the threshold voltage ofthe NMOS transistor b. (5 pts) Calculate the resistance between drain and source for each case c. (5 pts) Calculate the device aspect ratio W/L iKn_ 50μΑ/. d. (5 pts) Calculate the drain current of the NMOS transistor if...
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25,...
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region o...
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c)...
In the amplifier circuit below, the transistor has the following properties:Vt =1.5V,k’n=100 microA/V2,W=2 micro m ,L=0.2...
In the amplifier circuit below, the transistor has the following
properties:Vt =1.5V,k’n=100 microA/V2,W=2 micro m ,L=0.2 micro m,
lambda = 0V^-1
a. Find the dc values VG, VD, and VS.
b. Verify (prove) that the circuit is in the proper region of
operation for an amplifier
c. Find the transconductance value, gm
d. Draw the equivalent small-signal circuit model, replacing the
NMOS with its pi-model
e. Draw the equivalent small-signal circuit model, replacing the
NMOS with its T-model
f. Calculate...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
2. An NMOS transistor fabricated in a technology for which uC=400 ĻA/V2 and V=0.4V is required to operate with a small Vps as a variable resistor ranging in value from 0.2 k 2 to 1k12. (a) The Vos voltage is 1.8V and corresponding resistor is 0.2k12. Calculate W/L of MOSFET? (10 pts) (b) With same MOSFET, what is the Vgs to achieve a resistor of lk32? (10 points)
2. (25 pts) An NMOS transistor operating in the linearregion with VDs 50mV is measured to have a drain current of 25μΑ for VGs* IV (Case I) and 50μΑ for VGs* 1.5V (Case II). a. (5 pts) Calculate the threshold voltage ofthe NMOS transistor b. (5 pts) Calculate the resistance between drain and source for each case c. (5 pts) Calculate the device aspect ratio W/L iKn_ 50μΑ/. d. (5 pts) Calculate the drain current of the NMOS transistor if...
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c)...
In the amplifier circuit below, the transistor has the following
properties:Vt =1.5V,k’n=100 microA/V2,W=2 micro m ,L=0.2 micro m,
lambda = 0V^-1
a. Find the dc values VG, VD, and VS.
b. Verify (prove) that the circuit is in the proper region of
operation for an amplifier
c. Find the transconductance value, gm
d. Draw the equivalent small-signal circuit model, replacing the
NMOS with its pi-model
e. Draw the equivalent small-signal circuit model, replacing the
NMOS with its T-model
f. Calculate...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
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