* It is a center tap full-wave rectifier.
a) From the diagram primary to secondary turns N1 / N2 = 20 / 4 = 5
RMS primary voltage =250V
RMS secondary voltage = 250 ( N2 / N1 )=250 ( 1 / 5) = 50V
Max. voltage across secondary = Vm = 50 (
)=70.7V
DC output voltage
Hence voltage across load =45V
b) * Capacitor is used to get consistent d.c. signal. Capacitor is used to remove variations in DC signal. Thus giving us an almost pure DC signal from an AC signal.
* Capacitor minimises the ripple content in output waveform.
c) When D1 and D4 reversed
During +ve half cycle D2 and D4 are forward biased
D3 and D1 are reverse biased.
During -ve half cycle D3 and D4 are forward biased,
D2 and D4 are reverse biased.
d)
Waveform across capacitor
e) Doesn't remain same.
The Basic difference between silicon and germanium diode is the voltage needed to become “forward-biased”. Silicon diode require 0.7 volts to become forward-biased, whereas germanium diodes require only 0.3 volts to become forward-biased.
As the Ge diode has low potential barrier voltage ( 0.3V). It conducts more current in forward bias than Si.Formula for potential drop is V=IR.As current increases more potential drop occurs.
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