(a) Name two properties of Si that would make it unsuitable for specific device applications and...
(a) Name two properties of Si that would make it unsuitable for specific device applications and suggest an alternative semiconductor that can be used in each application. (b) You need to make a detector that is very sensitive to light with wavelength of 10 um. (i) In what part of the electromagnetic spectrum will this device need to operate ? (ii) Calculate the optimum energy gap for the detector material ? (iii) Explain why you would or would not use...
(a) Name two properties of Si that would make it unsuitable for specific device applications and suggest an alternative semiconductor that can be used in each application. (b) You need to make a detector that is very sensitive to light with wavelength of 10 um. In what part of the electromagnetic spectrum will this device need to operate ? (ii) Calculate the optimum energy gap for the detector material ? (iii) Explain why you would or would not use Si...
Theory section is below for the equations
PRELAB Read the theory section below. Calculate the photon wavelength in nm corresponding to a photon energy equal to the theoretical band gap energy of S1.121 eV and GaAs, 1.422 eV. These will be used to set the monochromator. THEORY One of the most important characteristics of a semiconductor is its band gap energy Eg Whereas an electron in an isolated atom has discrete energy levels, an electron in a semiconductor crystal has...
Complete the following table: Semiconductor Direct o Indirect? Eg (eV & J) Expected emitted Part of E&M wavelength. spectrum. Si GaAs InP GaAso.6Po4 GaAso.4Po.6 For the last two in the table, use the data from the graph on the GaAsP system Your solution will need to include your calculations and the use of the GaAsP graph to show how you determined the data for the two compound semiconductors for that system,
Complete the following table: Semiconductor Direct o Indirect? Eg...
3. Many parameters of crystals are dependent on the band gap. a) From the optical absorption spectrum of a certain semiconductor, one finds that the longest wavelength of radiation absorbed is 1.40 m. What is the band gap for this semiconductor? Explain how the band gap gives rise to this behavior. b) What band gap would be needed to make blue (450 nm) LEDs? Explain why. c) Most of the sun's radiation has wavelengths shorter than 1000 nm. For a...
Please help with this homework problem please, I would
appriciate it very much if you would break me into this. Thank
You
Q8) As was discussed in Section 1 b, an expression for the intrinsic carrier concentration in a semiconductor is given by: np = n = N N, exp E kᎢ Where N and N, are the so-called density of states and are given by N = 2 211m ky h- And N = 2 211m kT h For...
Here are the equations to use:
Use Eq. (2) below to calculate the intrinsic number density of conduction electrons in Si at a temperature of 405 K. You may use the values of effective mass mp 1.04mo. 09m1 where m is the mass of a free electron and the band gap energy value E- 1.12 ev, The conductivity of a semiconductor material can be expressed by where q is the elementary charge, n the number density of conduction electrons, μη...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
The first two pages are the background of the lab. I would
appreciate any help with the pre-lab questions, even if you cannot
answer them all, so I could continue to the post-lab on my own.
Experiment Thermodynamics: Entropy vs. Enthalpy OH, Background The formation of a Lewis Acid-Base complex occurs when you have a lone pair of electrons being donated to an electropositive ion or atom. Common examples are the Lewis Acid-Base complexes that most metal ions form in...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...